Heteroepitaxy of Wide Band Gap Semiconductors on Silicon Substrates - Softcover

Wan, Jianwei

Softcover

ISBN 10: 3639189256 ISBN 13: 9783639189254

Publisher: VDM Verlag, 2009

Synopsis

The wide band gap semiconductors SiC and GaN have shown great potential for use in high-temperature, high-power and high-frequency electronic devices as well as short-wavelength optical devices. However, the lack of large-area and low-cost substrates hindered their development seriously. Thus, the heteroepitaxy of SiC and GaN on silicon substrates is highly desirable for the Si-based electronic industry. In this study, we investigated the epitaxy of 3C-SiC and hexagonal GaN on silicon substrates and related devices. High quality 3C-SiC epilayers were deposited with trimethylsilane and silane/propane precursors, respectively. Inversion- mode n-channel 3C-SiC MOSFET devices with high channel mobility have been successfully fabricated. For GaN growth, AlGaN/GaN heterostructures were grown on 100 mm diameter Si(111) substrates without cracking using a high-temperature AlN buffer layer and a 3C-SiC buffer layer. In addition, the growth of hexagonal GaN on Si(100) substrates was demonstrated for the first time using a sputtered AlN buffer layer followed by a MOCVD grown AlN buffer layer.

About this title

About the Author

Jianwei Wan has been working for Dow Corning Corporation (Midland, Michigan) in the field of SiC epitaxy after receiving his Ph.D. degree in Electrical Engineering from Purdue University (West Lafayette, Indiana) in 2002. He also holds a B.S. degree and a M.S. degree in Physics from Tsinghua University, Beijing, China.

Edition details

• Publisher: VDM Verlag
• Publication date: 2009
• ISBN 10: 3639189256
• ISBN 13: 9783639189254
• Binding: Paperback
• Language: English
• Number of pages: 132