Advanced Simulation Methods For Gallium Nitride Electronic Devices: An accurate analysis of state-of-the-art high-frequency and high-power Gallium Nitride High Electron Mobility Transistors - Softcover

Marino, Fabio Alessio

Softcover

ISBN 10: 363931929X ISBN 13: 9783639319293

Publisher: VDM Verlag Dr. Müller, 2010

Synopsis

In this work, an accurate analysis of state-of-the- art high-frequency and high-power High Electron Mobility Transistor (HEMT) devices has been performed by using both commercial simulation tools and a full band Cellular Monte Carlo (CMC) simulator, in order to investigate the most important factors allowing improvements in reliability and manufacturability of AlGaN/GaN HEMTs at mm-wave frequencies. The effects of polarization charge on the electrostatic potential distribution across the heterostructure of a GaN HEMT device was first investigated. Subsequently, an intensive characterization on more than 10 wafers has been performed, in order to identify parasitic effects related to charge trapping phenomena. The effects of threading edge dislocations on the electron transport properties of GaN HEMT devices were then investigated. Finally, several studies have been performed on N-Face and Ga-face structures (both in enhancement and depletion mode). Scaling effects on the RF performance of these devices have also been investigated.

About this title

About the Author

Dr. Marino received the Ph.D. degree in information engineering from the University of Padova, in 2009, and the Ph.D. degree in electrical engineering from Arizona State University in 2010. He is the author of several scientific papers in international journals, conference proceeding and invited papers. He is the holder of several patents.

Edition details

• Publisher: VDM Verlag Dr. Müller
• Publication date: 2010
• ISBN 10: 363931929X
• ISBN 13: 9783639319293
• Binding: Paperback
• Language: English
• Number of pages: 120