Design of LNA using 0.18 um CMOS Technology for Receiver Front End: Analysis,Design and Simulation

 
9783659168901: Design of LNA using 0.18 um CMOS Technology for Receiver Front End: Analysis,Design and Simulation

As a distinct circuit in the receiver front end,LNA needs high gain and low Noise.This work includes the simulation results for differential topology and also improved circuit.The work is done for the frequency range of 2.45 GHz - 2.85 GHz with a central frequency of 2.65GHz.This work also demonstrate the need of on-chip inductor and capacitor design as these occupies very large silicon area.Final Simulation Results show that there is sufficient gain attained as it will reduce the Noise Figure of subsequent Circuits in Receiver Front End. Apart from voltage and power gain,simulations were done for GA,Gt etc.also,which qualifies the design. The effect of design parameters viz. Lg and Ld,for Noise and Gian respectively, have also been shown. At the end a detailed Layout of inductor is included so as to show,how much amount of silicon area it occupies. Hence,future work includes design of on-chip inductors and capacitors.

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About the Author:

Roopal K.Lamba Completed his Masters in VLSI Design and currently pursuing Ph.D. in the field of RF CMOS Circuit Design.He is working as Associate Professor in the department of ECE,School of Engineering,RK University,Rajkot(Gujarat)His area of Interest includes Digital VLSI ,Analog VLSI Design,ASIC Design ,Microwaves, Electromagnetics.

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Book Description Book Condition: New. Publisher/Verlag: LAP Lambert Academic Publishing | Analysis,Design and Simulation | As a distinct circuit in the receiver front end,LNA needs high gain and low Noise.This work includes the simulation results for differential topology and also improved circuit.The work is done for the frequency range of 2.45 GHz - 2.85 GHz with a central frequency of 2.65GHz.This work also demonstrate the need of on-chip inductor and capacitor design as these occupies very large silicon area.Final Simulation Results show that there is sufficient gain attained as it will reduce the Noise Figure of subsequent Circuits in Receiver Front End. Apart from voltage and power gain,simulations were done for GA,Gt etc.also,which qualifies the design. The effect of design parameters viz. Lg and Ld,for Noise and Gian respectively, have also been shown. At the end a detailed Layout of inductor is included so as to show,how much amount of silicon area it occupies. Hence,future work includes design of on-chip inductors and capacitors. | Format: Paperback | Language/Sprache: english | 60 pp. Bookseller Inventory # K9783659168901

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Book Description LAP Lambert Academic Publishing Mai 2016, 2016. Taschenbuch. Book Condition: Neu. Neuware - As a distinct circuit in the receiver front end,LNA needs high gain and low Noise.This work includes the simulation results for differential topology and also improved circuit.The work is done for the frequency range of 2.45 GHz - 2.85 GHz with a central frequency of 2.65GHz.This work also demonstrate the need of on-chip inductor and capacitor design as these occupies very large silicon area.Final Simulation Results show that there is sufficient gain attained as it will reduce the Noise Figure of subsequent Circuits in Receiver Front End. Apart from voltage and power gain,simulations were done for GA,Gt etc.also,which qualifies the design. The effect of design parameters viz. Lg and Ld,for Noise and Gian respectively, have also been shown. At the end a detailed Layout of inductor is included so as to show,how much amount of silicon area it occupies. Hence,future work includes design of on-chip inductors and capacitors. 60 pp. Englisch. Bookseller Inventory # 9783659168901

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Book Description LAP Lambert Academic Publishing Mai 2016, 2016. Taschenbuch. Book Condition: Neu. Neuware - As a distinct circuit in the receiver front end,LNA needs high gain and low Noise.This work includes the simulation results for differential topology and also improved circuit.The work is done for the frequency range of 2.45 GHz - 2.85 GHz with a central frequency of 2.65GHz.This work also demonstrate the need of on-chip inductor and capacitor design as these occupies very large silicon area.Final Simulation Results show that there is sufficient gain attained as it will reduce the Noise Figure of subsequent Circuits in Receiver Front End. Apart from voltage and power gain,simulations were done for GA,Gt etc.also,which qualifies the design. The effect of design parameters viz. Lg and Ld,for Noise and Gian respectively, have also been shown. At the end a detailed Layout of inductor is included so as to show,how much amount of silicon area it occupies. Hence,future work includes design of on-chip inductors and capacitors. 60 pp. Englisch. Bookseller Inventory # 9783659168901

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Book Description LAP Lambert Academic Publishing. Paperback. Book Condition: New. Paperback. 60 pages. Dimensions: 8.7in. x 5.9in. x 0.1in.As a distinct circuit in the receiver front end, LNA needs high gain and low Noise. This work includes the simulation results for differential topology and also improved circuit. The work is done for the frequency range of 2. 45 GHz - 2. 85 GHz with a central frequency of 2. 65GHz. This work also demonstrate the need of on-chip inductor and capacitor design as these occupies very large silicon area. Final Simulation Results show that there is sufficient gain attained as it will reduce the Noise Figure of subsequent Circuits in Receiver Front End. Apart from voltage and power gain, simulations were done for GA, Gt etc. also, which qualifies the design. The effect of design parameters viz. Lg and Ld, for Noise and Gian respectively, have also been shown. At the end a detailed Layout of inductor is included so as to show, how much amount of silicon area it occupies. Hence, future work includes design of on-chip inductors and capacitors. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN. Paperback. Bookseller Inventory # 9783659168901

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Book Description LAP Lambert Academic Publishing, Germany, 2016. Paperback. Book Condition: New. Aufl.. Language: English . Brand New Book ***** Print on Demand *****.As a distinct circuit in the receiver front end, LNA needs high gain and low Noise.This work includes the simulation results for differential topology and also improved circuit.The work is done for the frequency range of 2.45 GHz - 2.85 GHz with a central frequency of 2.65GHz.This work also demonstrate the need of on-chip inductor and capacitor design as these occupies very large silicon area.Final Simulation Results show that there is sufficient gain attained as it will reduce the Noise Figure of subsequent Circuits in Receiver Front End. Apart from voltage and power gain, simulations were done for GA, Gt etc.also, which qualifies the design. The effect of design parameters viz. Lg and Ld, for Noise and Gian respectively, have also been shown. At the end a detailed Layout of inductor is included so as to show, how much amount of silicon area it occupies. Hence, future work includes design of on-chip inductors and capacitor. Bookseller Inventory # AAV9783659168901

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