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GaN-based Semiconductor Devices: Theoretical Study of the Electronic and Optoelectronic Characterization - Softcover
Synopsis
Nitride-based materials still offer opportunities for the development of new electronic and optoelectronic applications. From the seventies of the 20th century, GaAs was considered as mature family material for many electronic applications. In the beginning of the 21th century, GaAs is step by step replaced by GaN in many applications due to its high polarization, chemical and physical stability, and wide bandgap. In this work we study theoretically the electronic and optoelectronic properties of GaN, and we conceive its applications. We test the triangular quantum well model for the high electron mobility transistors. We discuss the use of GaN-based HEMTs for the design of chemical and biological sensors. The plasmon frequencies of the 2DEG in the HEMT are calculated. Optoelectronic characterizations of AlGaN/GaN structures with GaAs-Au grating are discussed using full vector diffraction software. In the context of the optical properties of GaN, we calculate the free-carrier absorption coefficient with strong longitudinal-optical (LO) phonon-plasmon interaction. We take several mechanisms into account, which assist in the photon absorption process.
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About the Author
Sulaiman Rabbaa received B.Sc. in physics in 1989, and M.Sc. in solid state physics from the University of Jordan in 1991. He worked as a teacher, and then as Head of Educational Technologies. He had a lecturer position in Department of Physics in AAUJ from 2002 and still. He received PhD degree in Electronics and Informatics from VUB in 2013.
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- PublisherLAP LAMBERT Academic Publishing
- Publication date2014
- ISBN 10 3659557811
- ISBN 13 9783659557811
- BindingPaperback
- LanguageEnglish
- Number of pages212
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GaN-based Semiconductor Devices
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LAP LAMBERT Academic Publishing Nov 2014, 2014
ISBN 10: 3659557811
ISBN 13: 9783659557811
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Nitride-based materials still offer opportunities for the development of new electronic and optoelectronic applications. From the seventies of the 20th century, GaAs was considered as mature family material for many electronic applications. In the beginning of the 21th century, GaAs is step by step replaced by GaN in many applications due to its high polarization, chemical and physical stability, and wide bandgap. In this work we study theoretically the electronic and optoelectronic properties of GaN, and we conceive its applications. We test the triangular quantum well model for the high electron mobility transistors. We discuss the use of GaN-based HEMTs for the design of chemical and biological sensors. The plasmon frequencies of the 2DEG in the HEMT are calculated. Optoelectronic characterizations of AlGaN/GaN structures with GaAs-Au grating are discussed using full vector diffraction software. In the context of the optical properties of GaN, we calculate the free-carrier absorption coefficient with strong longitudinal-optical (LO) phonon-plasmon interaction. We take several mechanisms into account, which assist in the photon absorption process. 212 pp. Englisch. Seller Inventory # 9783659557811
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GaN-based Semiconductor Devices : Theoretical Study of the Electronic and Optoelectronic Characterization
Published by
LAP LAMBERT Academic Publishing, 2014
ISBN 10: 3659557811
ISBN 13: 9783659557811
New
Taschenbuch
Seller: AHA-BUCH GmbH, Einbeck, Germany
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Nitride-based materials still offer opportunities for the development of new electronic and optoelectronic applications. From the seventies of the 20th century, GaAs was considered as mature family material for many electronic applications. In the beginning of the 21th century, GaAs is step by step replaced by GaN in many applications due to its high polarization, chemical and physical stability, and wide bandgap. In this work we study theoretically the electronic and optoelectronic properties of GaN, and we conceive its applications. We test the triangular quantum well model for the high electron mobility transistors. We discuss the use of GaN-based HEMTs for the design of chemical and biological sensors. The plasmon frequencies of the 2DEG in the HEMT are calculated. Optoelectronic characterizations of AlGaN/GaN structures with GaAs-Au grating are discussed using full vector diffraction software. In the context of the optical properties of GaN, we calculate the free-carrier absorption coefficient with strong longitudinal-optical (LO) phonon-plasmon interaction. We take several mechanisms into account, which assist in the photon absorption process. Seller Inventory # 9783659557811
Quantity: 1 available
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GaN-based Semiconductor Devices
Published by
LAP LAMBERT Academic Publishing, 2014
ISBN 10: 3659557811
ISBN 13: 9783659557811
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Softcover
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Rabbaa SulaimanSulaiman Rabbaa received B.Sc. in physics in 1989, and M.Sc. in solid state physics from the University of Jordan in 1991. He worked as a teacher, and then as Head of Educational Technologies. He had a lecturer positio. Seller Inventory # 5164740
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