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Electrical and switching behavior of quaternary defect chalcopyrite - Softcover

 
9783659892608: Electrical and switching behavior of quaternary defect chalcopyrite

Synopsis

Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity σDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy ΔEσ indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model.

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About the Author

Dr.Amira Mohamed Hasanein ShakraThe author was born in Egypt on 19/8/1977.She graduated from physics department,Faculty of Education,Ain Shams university in 1999,she has got her M.Sc(Physics)2004 and Phd(Physics)2009.Scientific careers.Assistant lecture 2004 and Physics lecture2009 at Physics department,Faculty of Education,Ain Shams University.

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  • PublisherLAP LAMBERT Academic Publishing
  • Publication date2016
  • ISBN 10 3659892602
  • ISBN 13 9783659892608
  • BindingPaperback
  • LanguageEnglish
  • Number of pages56

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ISBN 10: 3659892602 ISBN 13: 9783659892608
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model. 56 pp. Englisch. Seller Inventory # 9783659892608

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Amira Mohamed Shakra
Published by LAP LAMBERT Academic Publishing, 2016
ISBN 10: 3659892602 ISBN 13: 9783659892608
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model. Seller Inventory # 9783659892608

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Amira Mohamed Shakra
Published by LAP LAMBERT Academic Publishing, 2016
ISBN 10: 3659892602 ISBN 13: 9783659892608
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Paperback. Condition: Brand New. 56 pages. 8.66x5.91x0.13 inches. In Stock. Seller Inventory # 3659892602

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Amira Mohamed Shakra|Madiha Fadel Abd El-Aal|Gamal Bakr Sakr
Published by LAP LAMBERT Academic Publishing, 2016
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Mohamed Shakra AmiraDr.Amira Mohamed Hasanein ShakraThe author was born in Egypt on 19/8/1977.She graduated from physics department,Faculty of Education,Ain Shams university in 1999,she has got her M.Sc(Physics)2004 and Phd(Physics)2. Seller Inventory # 158125086

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