Effect of Underlap On Device Performance of GaN Based DG-MOSFET - Softcover

Hasan, Md. Rokib; Al Faisal, Saud; Hossain, Marwan

Softcover

ISBN 10: 3659920134 ISBN 13: 9783659920134

Publisher: LAP LAMBERT Academic Publishing, 2016

Synopsis

GaN based double gate (DG) metal oxide semiconductor field effect transistors (MOSFETs) with a gate length of 10 nm have been designed for the next generation logic applications. The sub-threshold slope (SS) and drain induced barrier lowering (DIBL) are 66.5 mV/decade and 30 mV/V, respectively. The length of gate underlap is varied from 1 to 4 nm. The underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. To improve the figure of merits of the proposed device, source to gate (S-G) and gate to drain (G-D) distances are varied which is mentioned as underlap. The lengths are maintained equal for both sides of the gate.The length of gate underlap is varied from 1 to 4 nm. The underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. Therefore, the proposed GaN based DG MOSFETs shows excellent promise as one of the candidates to substitute currently used MOSFETs for future high speed applications.

About this title

About the Author

I am Md. Rokib Hasan. My home town is Mymensingh, Bangladesh. I have completed my B.Sc. in Electrical and Electronics Engineering from American International University- Bangladesh (AIUB).I was nominated as a General Secretary of "IEEE AIUB STUDENT BRANCH" for 2015.I am an active member of IEEE for three years(2014-2016).

Edition details

• Publisher: LAP LAMBERT Academic Publishing
• Publication date: 2016
• Language: English
• ISBN 10: 3659920134
• ISBN 13: 9783659920134
• Binding: Paperback
• Number of pages: 68