Items related to InAsSbP quantum dot mid-IR photodetectors
Synopsis
The achievements of low cost and size infrared photodetectors have allowed them to become ubiquitous consumer products.The challenges of photodetector technologies with the potential to meet the application requirements in the near future suggest the development of new physical phenomena and novel material system based photodetectors. Quantum confined structures possess a great potential for surpassing the traditional boundaries of bulk semiconductor devices. This book reviews the state-of-the-art infrared photodetectors based on quantum wells and quantum dots as well as dominant material systems used for them. Also, InAs-InSb-InP material system is suggested for fabrication of quantum dot mid-infrared photodetectors. The growth, electrical and optical properties of those photodetectors are presented. The obtained results open up new prospects, especially, for photodetectors operating at room temperature.
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About the Author
Dr. Vardan Harutyunyan. Obtained a PhD in physics from Yerevan State University (YSU), Armenia. Researcher at Center of Semiconductor Devices and Nanotechnologies,YSU, Armenia. Research interests: III-V semiconductors, nanotechnology, quantum dot infrared photodetectors, nanophotonics. Published more than 24 scientific papers.
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- PublisherLAP LAMBERT Academic Publishing
- Publication date2016
- ISBN 10 3659968951
- ISBN 13 9783659968952
- BindingPaperback
- LanguageEnglish
- Number of pages52
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InAsSbP quantum dot mid-IR photodetectors
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LAP LAMBERT Academic Publishing, 2016
ISBN 10: 3659968951
ISBN 13: 9783659968952
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InAsSbP quantum dot mid-IR photodetectors
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The achievements of low cost and size infrared photodetectors have allowed them to become ubiquitous consumer products.The challenges of photodetector technologies with the potential to meet the application requirements in the near future suggest the development of new physical phenomena and novel material system based photodetectors. Quantum confined structures possess a great potential for surpassing the traditional boundaries of bulk semiconductor devices. This book reviews the state-of-the-art infrared photodetectors based on quantum wells and quantum dots as well as dominant material systems used for them. Also, InAs-InSb-InP material system is suggested for fabrication of quantum dot mid-infrared photodetectors. The growth, electrical and optical properties of those photodetectors are presented. The obtained results open up new prospects, especially, for photodetectors operating at room temperature. 52 pp. Englisch. Seller Inventory # 9783659968952
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InAsSbP quantum dot mid-IR photodetectors
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InAsSbP quantum dot mid-IR photodetectors
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ISBN 10: 3659968951
ISBN 13: 9783659968952
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The achievements of low cost and size infrared photodetectors have allowed them to become ubiquitous consumer products.The challenges of photodetector technologies with the potential to meet the application requirements in the near future suggest the development of new physical phenomena and novel material system based photodetectors. Quantum confined structures possess a great potential for surpassing the traditional boundaries of bulk semiconductor devices. This book reviews the state-of-the-art infrared photodetectors based on quantum wells and quantum dots as well as dominant material systems used for them. Also, InAs-InSb-InP material system is suggested for fabrication of quantum dot mid-infrared photodetectors. The growth, electrical and optical properties of those photodetectors are presented. The obtained results open up new prospects, especially, for photodetectors operating at room temperature. Seller Inventory # 9783659968952
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InAsSbP quantum dot mid-IR photodetectors
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InAsSbP quantum dot mid-IR photodetectors
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Harutyunyan VardanDr. Vardan Harutyunyan. Obtained a PhD in physics from Yerevan State University (YSU), Armenia. Researcher at Center of Semiconductor Devices and Nanotechnologies,YSU, Armenia. Research interests: III-V semiconducto. Seller Inventory # 159148614
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