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Modeling and Simulation of Physical Properties in Semiconductors: Modeling and Simulation of Structural and Electronic Properties in Binary Semiconductors - Softcover
Synopsis
The empirical concepts as electronegativity, ionicity and bulk modulus are very important for studying the basic properties of solids. The difficulty in defining the ionicity and bulk modulus lies in transforming a qualitative or verbal concept into a quantitative, mathematical formula. My works concentrated on using empirical pseudopotential method (EPM) to calculate electronic properties (ionicity factor) ?i in terms of the difference between the first and second valence band at point X, Eg (V2-V1), and making various formulas as a function of transverse effective charge eT*, nearest-neighbor distance d, cohesive energy Ecoh, and refractive index n0. I had investigated for the structural properties (bulk modulus) B0 new models in terms of the cation part SC of the charge density, the transition pressure Pt and the lattice parameter. This study has three essential goals: 1. Define the ionicity factor and the bulk modulus by the electronic band structure and charge density, respectively. 2. Establish a new scale. 3. Study the validity of the new models under external effects. The reasonable results compared with experimental and theoretical ones are obtained.
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About the Author
Assoc. Prof. Dr. Yarub Al-Douri has Ph.D in Materials Science. He worked at NUS, Singapore; TU Chemnitz, Germany; CNRS, France and in other universities. Dr. Al-Douri edited and authored four books till now and a lot of international papers and conferences. He is now Editor-in-Chief of International Journal of Nanoelectronics and Materials.
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Modeling and Simulation of Physical Properties in Semiconductors
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LAP LAMBERT Academic Publishing Okt 2010, 2010
ISBN 10: 3843368066
ISBN 13: 9783843368063
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The empirical concepts as electronegativity, ionicity and bulk modulus are very important for studying the basic properties of solids. The difficulty in defining the ionicity and bulk modulus lies in transforming a qualitative or verbal concept into a quantitative, mathematical formula. My works concentrated on using empirical pseudopotential method (EPM) to calculate electronic properties (ionicity factor) i in terms of the difference between the first and second valence band at point X, Eg (V2-V1), and making various formulas as a function of transverse effective charge eT , nearest-neighbor distance d, cohesive energy Ecoh, and refractive index n0. I had investigated for the structural properties (bulk modulus) B0 new models in terms of the cation part SC of the charge density, the transition pressure Pt and the lattice parameter. This study has three essential goals: 1. Define the ionicity factor and the bulk modulus by the electronic band structure and charge density, respectively. 2. Establish a new scale. 3. Study the validity of the new models under external effects. The reasonable results compared with experimental and theoretical ones are obtained. 140 pp. Englisch. Seller Inventory # 9783843368063
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Modeling and Simulation of Physical Properties in Semiconductors
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ISBN 10: 3843368066
ISBN 13: 9783843368063
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Al-Douri YarubAssoc. Prof. Dr. Yarub Al-Douri has Ph.D in Materials Science. He worked at NUS, Singapore TU Chemnitz, Germany CNRS, France and in other universities. Dr. Al-Douri edited and authored four books till now and a lo. Seller Inventory # 5466739
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Modeling and Simulation of Physical Properties in Semiconductors : Modeling and Simulation of Structural and Electronic Properties in Binary Semiconductors
Published by
LAP LAMBERT Academic Publishing, 2010
ISBN 10: 3843368066
ISBN 13: 9783843368063
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The empirical concepts as electronegativity, ionicity and bulk modulus are very important for studying the basic properties of solids. The difficulty in defining the ionicity and bulk modulus lies in transforming a qualitative or verbal concept into a quantitative, mathematical formula. My works concentrated on using empirical pseudopotential method (EPM) to calculate electronic properties (ionicity factor) i in terms of the difference between the first and second valence band at point X, Eg (V2-V1), and making various formulas as a function of transverse effective charge eT , nearest-neighbor distance d, cohesive energy Ecoh, and refractive index n0. I had investigated for the structural properties (bulk modulus) B0 new models in terms of the cation part SC of the charge density, the transition pressure Pt and the lattice parameter. This study has three essential goals: 1. Define the ionicity factor and the bulk modulus by the electronic band structure and charge density, respectively. 2. Establish a new scale. 3. Study the validity of the new models under external effects. The reasonable results compared with experimental and theoretical ones are obtained. Seller Inventory # 9783843368063
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Modeling and Simulation of Physical Properties in Semiconductors
Published by
LAP LAMBERT Academic Publishing Okt 2010, 2010
ISBN 10: 3843368066
ISBN 13: 9783843368063
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Taschenbuch
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The empirical concepts as electronegativity, ionicity and bulk modulus are very important for studying the basic properties of solids. The difficulty in defining the ionicity and bulk modulus lies in transforming a qualitative or verbal concept into a quantitative, mathematical formula. My works concentrated on using empirical pseudopotential method (EPM) to calculate electronic properties (ionicity factor) ¿i in terms of the difference between the first and second valence band at point X, Eg (V2-V1), and making various formulas as a function of transverse effective charge eT\*, nearest-neighbor distance d, cohesive energy Ecoh, and refractive index n0. I had investigated for the structural properties (bulk modulus) B0 new models in terms of the cation part SC of the charge density, the transition pressure Pt and the lattice parameter. This study has three essential goals: 1. Define the ionicity factor and the bulk modulus by the electronic band structure and charge density, respectively. 2. Establish a new scale. 3. Study the validity of the new models under external effects. The reasonable results compared with experimental and theoretical ones are obtained.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 140 pp. Englisch. Seller Inventory # 9783843368063
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Modeling and Simulation of Physical Properties in Semiconductors | Modeling and Simulation of Structural and Electronic Properties in Binary Semiconductors
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ISBN 13: 9783843368063
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Taschenbuch. Condition: Neu. Modeling and Simulation of Physical Properties in Semiconductors | Modeling and Simulation of Structural and Electronic Properties in Binary Semiconductors | Yarub Al-Douri | Taschenbuch | 140 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783843368063 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. Seller Inventory # 107241755
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Modeling and Simulation of Physical Properties in Semiconductors: Modeling and Simulation of Structural and Electronic Properties in Binary Semiconductors
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ISBN 13: 9783843368063
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