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Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap.
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Joseph Muna Karanja holds B.Ed(science)in physics and maths from Egerton University,Kenya and Msc(Electronics) specializing in semiconductor electronics from Kenyatta University, Kenya. He has teaching experience in various University in Kenya notably University of Nairobi and Kenyatta University both from Kenya.
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- PublisherLAP LAMBERT Academic Publishing
- Publication date2011
- ISBN 10 384430147X
- ISBN 13 9783844301472
- BindingPaperback
- Number of pages92
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The Science of Phase Change Random Access Memories (Pcram)
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THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM): Semiconductor memory
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Book Description Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap. 92 pp. Englisch. Seller Inventory # 9783844301472
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THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES PCRAM Semiconductor memory
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THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM) : Semiconductor memory
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Book Description Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap. Seller Inventory # 9783844301472
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THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM)
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Book Description Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: KARANJA JOSEPHJoseph Muna Karanja holds B.Ed(science)in physics and maths from Egerton University,Kenya and Msc(Electronics) specializing in semiconductor electronics from Kenyatta University, Kenya. He has teaching experience in . Seller Inventory # 5470655
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