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AlGaN/GaN-HEMT Power Amplifiers with Optimized Power-Added Efficiency for X-Band Applications - Softcover

 
9783866446151: AlGaN/GaN-HEMT Power Amplifiers with Optimized Power-Added Efficiency for X-Band Applications

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This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

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ISBN 10: 3866446152 ISBN 13: 9783866446151
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs. 262 pp. Englisch. Seller Inventory # 9783866446151

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ISBN 10: 3866446152 ISBN 13: 9783866446151
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs. Seller Inventory # 9783866446151

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Kühn, Jutta
Published by KIT Scientific Publishing, 2014
ISBN 10: 3866446152 ISBN 13: 9783866446151
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime . Seller Inventory # 5587959

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ISBN 10: 3866446152 ISBN 13: 9783866446151
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Taschenbuch. Condition: Neu. Neuware -This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.Books on Demand GmbH, Überseering 33, 22297 Hamburg 262 pp. Englisch. Seller Inventory # 9783866446151

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Taschenbuch. Condition: Neu. AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications | Jutta Kühn | Taschenbuch | 262 S. | Englisch | 2014 | Karlsruher Institut für Technologie | EAN 9783866446151 | Verantwortliche Person für die EU: KIT Scientific Publishing, Straße am Forum 2, 76131 Karlsruhe, info[at]ksp[dot]kit[dot]edu | Anbieter: preigu. Seller Inventory # 105170314

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Published by KIT Scientific Publishing, 2012
ISBN 10: 3866446152 ISBN 13: 9783866446151
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Paperback. Condition: Brand New. 262 pages. 8.27x5.83x0.62 inches. In Stock. Seller Inventory # 3866446152

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