Synopsis
These proceedings try to cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern included, cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP). Wet cleaning processes are still the dominant technology, despite the new results that have been obtained using dry cleaning processes. The conference also looked at the topic of ozonated DI-water as a replacement for hydrogen peroxide, or even sulfuric-based mixtures, which could potentially offer economical and environmental savings.
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Reviews
Proceedings from the September 1998 symposium feature 71 contributions that cover aspects of ultra-clean Si-technology and show that the rinse step in the cleaning of silicon wafers likely results in recontamination by dissolved metal ions. Topics include cleaning, contamination control, Si-surface chemistry and topography, cleaning at the interconnect level, resist strip and polymer removal, contamination aspects of metallization, wafer backside cleaning, and cleaning after chemical-mechanical polishing. Book News, Inc.®, Portland, OR
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Ultra Clean Processing of Silicon Surfaces (Solid State Phenomena)
Seller: Alplaus Books, Alplaus, NY, U.S.A.
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Paperback. Condition: Good. Solid State Phenomena, Vols. 65-66. Name on first page, else no markings noted. Gentle usage wear. Seller Inventory # 37215aaoz