Proceedings from the September 1998 symposium feature 71 contributions that cover aspects of ultra-clean Si-technology and show that the rinse step in the cleaning of silicon wafers likely results in recontamination by dissolved metal ions. Topics include cleaning, contamination control, Si-surface chemistry and topography, cleaning at the interconnect level, resist strip and polymer removal, contamination aspects of metallization, wafer backside cleaning, and cleaning after chemical-mechanical polishing. Book News, Inc.®, Portland, OR
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