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In this book, A theoretical model of energy loss mechanism as a function of electron temperature and electron concentration has been given for n-type GaN structures. The energy relaxation rates and mobility for warm and hot electrons have been calculated for over the electron temperature(T) range of 1.5 to 500 K at lattice temperature T0=1.5 K. It has been found that the acoustic phonon scattering due to deformation potential and piezoelectric coupling are the dominant scattering mechanisms at low electron temperatures (Te100 K, the polar optic phonon scattering becomes the effective scattering mechanism. The optic phonon energy of GaN was obtained as 91.8 meV and the PO phonon emission time as 8.6 fs. Also, the drift velocity of electrons as function of electron temperature and electric field has been obtained. The theoretical results are compared with available experimental results and a good agreement is observed.
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Theoretical Study of Electrical Properties of n-type GaN
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LAP LAMBERT Academic Publishing Mai 2018, 2018
ISBN 10: 6139834945
ISBN 13: 9786139834945
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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In this book, A theoretical model of energy loss mechanism as a function of electron temperature and electron concentration has been given for n-type GaN structures. The energy relaxation rates and mobility for warm and hot electrons have been calculated for over the electron temperature(T) range of 1.5 to 500 K at lattice temperature T0=1.5 K. It has been found that the acoustic phonon scattering due to deformation potential and piezoelectric coupling are the dominant scattering mechanisms at low electron temperatures (Te 100 K, the polar optic phonon scattering becomes the effective scattering mechanism. The optic phonon energy of GaN was obtained as 91.8 meV and the PO phonon emission time as 8.6 fs. Also, the drift velocity of electrons as function of electron temperature and electric field has been obtained. The theoretical results are compared with available experimental results and a good agreement is observed. 76 pp. Englisch. Seller Inventory # 9786139834945
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Theoretical Study of Electrical Properties of n-type GaN
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LAP LAMBERT Academic Publishing, 2018
ISBN 10: 6139834945
ISBN 13: 9786139834945
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Biswas Dr. ArindamDr. Arindam BISWAS received M-Tech degree in Radio Physics and Electronics from University of Calcutta, India in 2010 and PhD from NIT Durgapur in 2013. He was a Post-Doctoral Researcher at Pusan National Universit. Seller Inventory # 385661773
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Theoretical Study of Electrical Properties of n-type GaN
Published by
LAP LAMBERT Academic Publishing Mai 2018, 2018
ISBN 10: 6139834945
ISBN 13: 9786139834945
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Taschenbuch
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In this book, A theoretical model of energy loss mechanism as a function of electron temperature and electron concentration has been given for n-type GaN structures. The energy relaxation rates and mobility for warm and hot electrons have been calculated for over the electron temperature(T) range of 1.5 to 500 K at lattice temperature T0=1.5 K. It has been found that the acoustic phonon scattering due to deformation potential and piezoelectric coupling are the dominant scattering mechanisms at low electron temperatures (Te100 K, the polar optic phonon scattering becomes the effective scattering mechanism. The optic phonon energy of GaN was obtained as 91.8 meV and the PO phonon emission time as 8.6 fs. Also, the drift velocity of electrons as function of electron temperature and electric field has been obtained. The theoretical results are compared with available experimental results and a good agreement is observed.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 76 pp. Englisch. Seller Inventory # 9786139834945
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Theoretical Study of Electrical Properties of n-type GaN : Transport in Nanostructure
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ISBN 10: 6139834945
ISBN 13: 9786139834945
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Seller: AHA-BUCH GmbH, Einbeck, Germany
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In this book, A theoretical model of energy loss mechanism as a function of electron temperature and electron concentration has been given for n-type GaN structures. The energy relaxation rates and mobility for warm and hot electrons have been calculated for over the electron temperature(T) range of 1.5 to 500 K at lattice temperature T0=1.5 K. It has been found that the acoustic phonon scattering due to deformation potential and piezoelectric coupling are the dominant scattering mechanisms at low electron temperatures (Te 100 K, the polar optic phonon scattering becomes the effective scattering mechanism. The optic phonon energy of GaN was obtained as 91.8 meV and the PO phonon emission time as 8.6 fs. Also, the drift velocity of electrons as function of electron temperature and electric field has been obtained. The theoretical results are compared with available experimental results and a good agreement is observed. Seller Inventory # 9786139834945
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Theoretical Study of Electrical Properties of n-type GaN | Transport in Nanostructure
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LAP LAMBERT Academic Publishing, 2018
ISBN 10: 6139834945
ISBN 13: 9786139834945
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Seller: preigu, Osnabrück, Germany
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Taschenbuch. Condition: Neu. Theoretical Study of Electrical Properties of n-type GaN | Transport in Nanostructure | Arindam Biswas (u. a.) | Taschenbuch | 76 S. | Englisch | 2018 | LAP LAMBERT Academic Publishing | EAN 9786139834945 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. Seller Inventory # 114002965
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