Search results for Modeling and Simulation of MOSFET at Liquid Nitrogen...
Seller Image
Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature
Published by
LAP LAMBERT Academic Publishing Nov 2019, 2019
ISBN 10: 6200093784
ISBN 13: 9786200093783
New
Taschenbuch
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Since 1959 when Jack Kilby of Texas Instruments and Bob Noyce of Fairchild Semiconductor invented the integrated circuit, a hallmark of the semiconductor industry has been the continuous growth in chip performance and in the number of devices per chip. Only six years later in 1965, Gordon Moore, then of Fairchild, published his famous prediction that the number of devices on a chip would double every 12-18 months. This prediction, known as 'Moore's Law', has become the yardstick against which are measured achievements in performance and packing density that come from shrinking the size of the MOSFET. This phenomenal scaling of device size - surpassing two orders of magnitude in the last 40 years - has provided the gains in performance and packing density that underlie the GHz microprocessors and SRAMs that exist today. The connection between increased performance and smaller devices faces challenges at both the device and circuit level. Although shorter MOSFETs can provide higher current densities, unless the parasitic resistances and capacitances associated with the devices and with the metal lines that interconnect the devices scale similarly, the device performance. 120 pp. Englisch. Seller Inventory # 9786200093783
Stock Image
Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature
Published by
LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200093784
ISBN 13: 9786200093783
New
Softcover
Seller: Books Puddle, New York, NY, U.S.A.
Seller rating 4 out of 5 stars
Condition: New. Seller Inventory # 26397281606
Stock Image
Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature
Published by
LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200093784
ISBN 13: 9786200093783
New
Softcover
Seller: Majestic Books, Hounslow, United Kingdom
Seller rating 4 out of 5 stars
Condition: New. Print on Demand. Seller Inventory # 400144025
Buy New
US$ 100.23
Shipping:
US$ 8.66
From United Kingdom to U.S.A.
Quantity: 4 available
Seller Image
Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature
Published by
LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200093784
ISBN 13: 9786200093783
New
Softcover
Seller: moluna, Greven, Germany
Seller rating 4 out of 5 stars
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Kalyan Birinderjit SinghMr. Birinderjit Singh Kalyan has vast experience in teaching and research, Master in Technology from Panjab University in Microelectronics and research interest in Nano Computing Devices, Quantum Cellular Auto. Seller Inventory # 497400856
Buy New
US$ 54.50
Shipping:
US$ 57.04
From Germany to U.S.A.
Quantity: Over 20 available
Stock Image
Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature
Published by
LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200093784
ISBN 13: 9786200093783
New
Softcover
Seller: Biblios, Frankfurt am main, HESSE, Germany
Seller rating 4 out of 5 stars
Condition: New. PRINT ON DEMAND. Seller Inventory # 18397281612
Seller Image
Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature
Published by
LAP LAMBERT Academic Publishing Nov 2019, 2019
ISBN 10: 6200093784
ISBN 13: 9786200093783
New
Taschenbuch
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Neuware -Since 1959 when Jack Kilby of Texas Instruments and Bob Noyce of Fairchild Semiconductor invented the integrated circuit, a hallmark of the semiconductor industry has been the continuous growth in chip performance and in the number of devices per chip. Only six years later in 1965, Gordon Moore, then of Fairchild, published his famous prediction that the number of devices on a chip would double every 12-18 months. This prediction, known as 'Moore's Law', has become the yardstick against which are measured achievements in performance and packing density that come from shrinking the size of the MOSFET. This phenomenal scaling of device size - surpassing two orders of magnitude in the last 40 years - has provided the gains in performance and packing density that underlie the GHz microprocessors and SRAMs that exist today. The connection between increased performance and smaller devices faces challenges at both the device and circuit level. Although shorter MOSFETs can provide higher current densities, unless the parasitic resistances and capacitances associated with the devices and with the metal lines that interconnect the devices scale similarly, the device performance.Books on Demand GmbH, Überseering 33, 22297 Hamburg 120 pp. Englisch. Seller Inventory # 9786200093783
Seller Image
Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature
Published by
LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200093784
ISBN 13: 9786200093783
New
Taschenbuch
Seller: AHA-BUCH GmbH, Einbeck, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Since 1959 when Jack Kilby of Texas Instruments and Bob Noyce of Fairchild Semiconductor invented the integrated circuit, a hallmark of the semiconductor industry has been the continuous growth in chip performance and in the number of devices per chip. Only six years later in 1965, Gordon Moore, then of Fairchild, published his famous prediction that the number of devices on a chip would double every 12-18 months. This prediction, known as 'Moore's Law', has become the yardstick against which are measured achievements in performance and packing density that come from shrinking the size of the MOSFET. This phenomenal scaling of device size - surpassing two orders of magnitude in the last 40 years - has provided the gains in performance and packing density that underlie the GHz microprocessors and SRAMs that exist today. The connection between increased performance and smaller devices faces challenges at both the device and circuit level. Although shorter MOSFETs can provide higher current densities, unless the parasitic resistances and capacitances associated with the devices and with the metal lines that interconnect the devices scale similarly, the device performance. Seller Inventory # 9786200093783
Seller Image
Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature
Published by
LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200093784
ISBN 13: 9786200093783
New
Taschenbuch
Seller: preigu, Osnabrück, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature | Birinderjit Singh Kalyan (u. a.) | Taschenbuch | Englisch | 2019 | LAP LAMBERT Academic Publishing | EAN 9786200093783 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu Print on Demand. Seller Inventory # 120472310