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Low Leakage SRAM Memory: Design of Low Power High Performance SRAMMemory using Gate Leakage ReductionTechnique - Softcover
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I present some techniques to decrease the gate and other leakage dissipation in Deep Sub-Micron SRAM memories. This book reviews detail SRAM operations. This book also reviews various transistor intrinsic leakage mechanisms, including weak inversion, drain-induced barrier lowering, gate-induced drain leakage, and gate oxide tunneling. Finally, the book explores different circuit techniques to reduce the leakage power consumption. The W/L ratios are calculated from the equations of current in transistors (Linear and Saturation mode) for smooth read-write operation of both 0 and 1. I use W1/W3 = 1.5 and W4/W6 = 1.5. I first designed conventional SRAM memory and observed leakage current in various technology. In 90 nm technology conventional SRAM shows a leakage current of 1.87nA at steady state. Data retention gated-ground cache (DGR-cache) method reduces the leakage current to 100pA. Drowsy cache method reduces the leakage current to 84pA.
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Low Leakage SRAM Memory: Design of Low Power High Performance SRAMMemory using Gate Leakage ReductionTechnique
Published by
LAP LAMBERT Academic Publishing, 2022
ISBN 10: 6205517116
ISBN 13: 9786205517116
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Low Leakage SRAM Memory: Design of Low Power High Performance SRAMMemory using Gate Leakage ReductionTechnique
Published by
LAP LAMBERT Academic Publishing, 2022
ISBN 10: 6205517116
ISBN 13: 9786205517116
New
Softcover
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Low Leakage SRAM Memory
Published by
LAP LAMBERT Academic Publishing Nov 2022, 2022
ISBN 10: 6205517116
ISBN 13: 9786205517116
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -I present some techniques to decrease the gate and other leakage dissipation in Deep Sub-Micron SRAM memories. This book reviews detail SRAM operations. This book also reviews various transistor intrinsic leakage mechanisms, including weak inversion, drain-induced barrier lowering, gate-induced drain leakage, and gate oxide tunneling. Finally, the book explores different circuit techniques to reduce the leakage power consumption. The W/L ratios are calculated from the equations of current in transistors (Linear and Saturation mode) for smooth read-write operation of both 0 and 1. I use W1/W3 = 1.5 and W4/W6 = 1.5. I first designed conventional SRAM memory and observed leakage current in various technology. In 90 nm technology conventional SRAM shows a leakage current of 1.87nA at steady state. Data retention gated-ground cache (DGR-cache) method reduces the leakage current to 100pA. Drowsy cache method reduces the leakage current to 84pA. 68 pp. Englisch. Seller Inventory # 9786205517116
Quantity: 2 available
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Low Leakage SRAM Memory: Design of Low Power High Performance SRAMMemory using Gate Leakage ReductionTechnique
Published by
LAP LAMBERT Academic Publishing, 2022
ISBN 10: 6205517116
ISBN 13: 9786205517116
New
Softcover
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Condition: New. PRINT ON DEMAND. Seller Inventory # 18397337424
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Low Leakage SRAM Memory
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LAP Lambert Academic Publishing, 2022
ISBN 10: 6205517116
ISBN 13: 9786205517116
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. I present some techniques to decrease the gate and other leakage dissipation in Deep Sub-Micron SRAM memories. This book reviews detail SRAM operations. This book also reviews various transistor intrinsic leakage mechanisms, including weak inversion, drain-. Seller Inventory # 778226850
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Low Leakage SRAM Memory
Published by
LAP LAMBERT Academic Publishing Nov 2022, 2022
ISBN 10: 6205517116
ISBN 13: 9786205517116
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Taschenbuch. Condition: Neu. Neuware Books on Demand GmbH, Überseering 33, 22297 Hamburg 68 pp. Englisch. Seller Inventory # 9786205517116
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Low Leakage SRAM Memory : Design of Low Power High Performance SRAMMemory using Gate Leakage ReductionTechnique
Published by
LAP LAMBERT Academic Publishing, 2022
ISBN 10: 6205517116
ISBN 13: 9786205517116
New
Taschenbuch
Seller: AHA-BUCH GmbH, Einbeck, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - I present some techniques to decrease the gate and other leakage dissipation in Deep Sub-Micron SRAM memories. This book reviews detail SRAM operations. This book also reviews various transistor intrinsic leakage mechanisms, including weak inversion, drain-induced barrier lowering, gate-induced drain leakage, and gate oxide tunneling. Finally, the book explores different circuit techniques to reduce the leakage power consumption. The W/L ratios are calculated from the equations of current in transistors (Linear and Saturation mode) for smooth read-write operation of both 0 and 1. I use W1/W3 = 1.5 and W4/W6 = 1.5. I first designed conventional SRAM memory and observed leakage current in various technology. In 90 nm technology conventional SRAM shows a leakage current of 1.87nA at steady state. Data retention gated-ground cache (DGR-cache) method reduces the leakage current to 100pA. Drowsy cache method reduces the leakage current to 84pA. Seller Inventory # 9786205517116
Quantity: 1 available