Modulating Optoelectronic Properties in Multilayer QDs via FEM: Advancing nanoscale semiconductor applications in electronic and optical technologies using the Finite Element Method - Softcover
Synopsis
This book explores the electronic and optical properties of GaAs/Ga₁₋ₓAlₓAs multilayered spherical quantum dots. Using the finite element method within the effective-mass approximation, we solved the Schrödinger equation to obtain wave functions and eigenvalues, which were used to analyze donor binding energy, photoionization cross-section, optical rectification, absorption coefficients, and second harmonic generation. The effects of external perturbations such as electric fields, hydrostatic pressure, and temperature were also examined. Our findings show that binding energy increases with pressure and decreases with temperature and electric fields. Additionally, we studied the impact of position-dependent effective mass, dielectric function, conduction band nonparabolicity, and polaronic mass on binding energy and photoionization. Further, we analyzed nonlinear optical rectification, second-harmonic generation, and absorption coefficients under Kratzer potential confinement. Our results contribute valuable insights for quantum dot-based device applications and future experimental research.
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Modulating Optoelectronic Properties in Multilayer QDs via FEM
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ISBN 13: 9786208443443
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Modulating Optoelectronic Properties in Multilayer QDs via FEM
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LAP LAMBERT Academic Publishing, 2025
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ISBN 13: 9786208443443
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Modulating Optoelectronic Properties in Multilayer QDs via FEM: Advancing nanoscale semiconductor applications in electronic and optical technologies using the Finite Element Method
Published by
LAP LAMBERT Academic Publishing, 2025
ISBN 10: 620844344X
ISBN 13: 9786208443443
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Modulating Optoelectronic Properties in Multilayer QDs via FEM
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book explores the electronic and optical properties of GaAs/Ga Al As multilayered spherical quantum dots. Using the finite element method within the effective-mass approximation, we solved the Schrödinger equation to obtain wave functions and eigenvalues, which were used to analyze donor binding energy, photoionization cross-section, optical rectification, absorption coefficients, and second harmonic generation. The effects of external perturbations such as electric fields, hydrostatic pressure, and temperature were also examined. Our findings show that binding energy increases with pressure and decreases with temperature and electric fields. Additionally, we studied the impact of position-dependent effective mass, dielectric function, conduction band nonparabolicity, and polaronic mass on binding energy and photoionization. Further, we analyzed nonlinear optical rectification, second-harmonic generation, and absorption coefficients under Kratzer potential confinement. Our results contribute valuable insights for quantum dot-based device applications and future experimental research. 116 pp. Englisch. Seller Inventory # 9786208443443
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Modulating Optoelectronic Properties in Multilayer QDs via FEM (Paperback)
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ISBN 10: 620844344X
ISBN 13: 9786208443443
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Paperback. Condition: new. Paperback. This book explores the electronic and optical properties of GaAs/Ga1AlAs multilayered spherical quantum dots. Using the finite element method within the effective-mass approximation, we solved the Schroedinger equation to obtain wave functions and eigenvalues, which were used to analyze donor binding energy, photoionization cross-section, optical rectification, absorption coefficients, and second harmonic generation. The effects of external perturbations such as electric fields, hydrostatic pressure, and temperature were also examined. Our findings show that binding energy increases with pressure and decreases with temperature and electric fields. Additionally, we studied the impact of position-dependent effective mass, dielectric function, conduction band nonparabolicity, and polaronic mass on binding energy and photoionization. Further, we analyzed nonlinear optical rectification, second-harmonic generation, and absorption coefficients under Kratzer potential confinement. Our results contribute valuable insights for quantum dot-based device applications and future experimental research. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Seller Inventory # 9786208443443
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Modulating Optoelectronic Properties in Multilayer QDs via FEM
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ISBN 13: 9786208443443
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Modulating Optoelectronic Properties in Multilayer QDs via FEM
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Modulating Optoelectronic Properties in Multilayer QDs via FEM
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ISBN 10: 620844344X
ISBN 13: 9786208443443
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book explores the electronic and optical properties of GaAs/Gä¿¿Al¿As multilayered spherical quantum dots. Using the finite element method within the effective-mass approximation, we solved the Schrödinger equation to obtain wave functions and eigenvalues, which were used to analyze donor binding energy, photoionization cross-section, optical rectification, absorption coefficients, and second harmonic generation. The effects of external perturbations such as electric fields, hydrostatic pressure, and temperature were also examined. Our findings show that binding energy increases with pressure and decreases with temperature and electric fields. Additionally, we studied the impact of position-dependent effective mass, dielectric function, conduction band nonparabolicity, and polaronic mass on binding energy and photoionization. Further, we analyzed nonlinear optical rectification, second-harmonic generation, and absorption coefficients under Kratzer potential confinement. Our results contribute valuable insights for quantum dot-based device applications and future experimental research.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 116 pp. Englisch. Seller Inventory # 9786208443443
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Modulating Optoelectronic Properties in Multilayer QDs via FEM | Advancing nanoscale semiconductor applications in electronic and optical technologies using the Finite Element Method
Published by
LAP LAMBERT Academic Publishing, 2025
ISBN 10: 620844344X
ISBN 13: 9786208443443
New
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Taschenbuch. Condition: Neu. Modulating Optoelectronic Properties in Multilayer QDs via FEM | Advancing nanoscale semiconductor applications in electronic and optical technologies using the Finite Element Method | Abdelghani Fakkahi (u. a.) | Taschenbuch | Englisch | 2025 | LAP LAMBERT Academic Publishing | EAN 9786208443443 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu. Seller Inventory # 133889001
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Modulating Optoelectronic Properties in Multilayer QDs via FEM : Advancing nanoscale semiconductor applications in electronic and optical technologies using the Finite Element Method
Published by
LAP LAMBERT Academic Publishing, 2025
ISBN 10: 620844344X
ISBN 13: 9786208443443
New
Taschenbuch
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book explores the electronic and optical properties of GaAs/Ga Al As multilayered spherical quantum dots. Using the finite element method within the effective-mass approximation, we solved the Schrödinger equation to obtain wave functions and eigenvalues, which were used to analyze donor binding energy, photoionization cross-section, optical rectification, absorption coefficients, and second harmonic generation. The effects of external perturbations such as electric fields, hydrostatic pressure, and temperature were also examined. Our findings show that binding energy increases with pressure and decreases with temperature and electric fields. Additionally, we studied the impact of position-dependent effective mass, dielectric function, conduction band nonparabolicity, and polaronic mass on binding energy and photoionization. Further, we analyzed nonlinear optical rectification, second-harmonic generation, and absorption coefficients under Kratzer potential confinement. Our results contribute valuable insights for quantum dot-based device applications and future experimental research. Seller Inventory # 9786208443443
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