paperback. Condition: New. Ship out in 2 business day, And Fast shipping, Free Tracking number will be provided after the shipment.Paperback. Language: Chinese. Publisher: China Machine Press Pub. Date :2011-04-01. Nano-CMOS Circuit and Physical Design will nanometer process. device manufacturability. advanced circuit design and physical implementation and other content related to integrated together to form a set of advanced semiconductor technology. device and process of the new development. providing design considerations. focusing on the interaction between technology and design. and describes the design for manufacturing and the impact of volatility. Important topics include nano-CMOS technology designed to narrow the issues and their impact; subwavelength lithography; operational problems and solutions and theoretical physics; design for manufacturing and volatility. Nano-CMOS Circuit and Physical Design for IC designers and professionals in the field to read. Contents: Translator. then the original sequence in the original Preface Chapter 1 nanometer CMOS 1.1 narrowing the issues and implications of the design method of nano-CMOS 1.2 times performance improvement makes the continuity of innovation necessary to reduce the 1.3 sub 100nm lithography challenges and subwavelength 1.3.1 Review process. after the challenge (metal) are process challenges before 1.3.2 (transistor) 1.4 1.5 lithography process control and reliability issues and mask data explosion of 1.6 new circuit and physical design engineers. 1.7 Modeling challenge the need for design changes of 1.8 Summary 1.9 References Chapter 2 2.1 CMOS devices and process technology equipment requirements prior to procedure 2.1.1 Technical Background of the narrow gate dielectric 2.1.2 2.1.3 2.1.4 Rapid Thermal strain engineering technology 2.2 reduce the size of the CMOS with a problem of procedure-related devices 2.2.2 2.2.1 CMOS quantum effects reduce the challenge of polysilicon gate depletion effect model 2.2.3 2.2.4 2.2.5 metal gate electrode gate direct tunneling leakage current parasitic capacitance 2.2.7 2.2.6 reliability issues of concern after the procedure 2.3 interconnect technology scaling 2.3.2 2.3.1 copper interconnect low-k dielectric interconnect technology 2.3.3 2.3.4 Future challenges of the global Internet Technical Reference with subwavelength lithography Chapter 3 Theory and Practice 3.1 Introduction 3.2 Overview and imaging theory challenges 3.2.1 100nm 100nm node. the node k important factors 3.2.2 3.2.3 low-k imaging process fluctuations on the process 3.2.4 Sensitivity of low-k imaging and depth of focus imaging and exposure 3.2.5 low-k low-k imaging 3.2.6 tolerance and mask error enhancement factor on the impact of low-k imaging and its 3.2.7 3.2.8 The sensitivity of low-k aberration imaging and CD change and the relationship between Article 3.2.9 wide imaging and low-k corner radius 3.3 Resolution Enhancement technology: a special illumination pattern of physical 3.3.1 3.3.2 Optical proximity correction (OPC) 3.3.3 Graphics 3.3.4 sub-resolution assist alternating phase shift mask design 3.4 physical complexity of RET and OPC specific lighting conditions of 3.4.1 3.4.3 3.4.2 Alternating two-dimensional map -type phase shift mask mask costs 3.5 3.4.4 Prospects: The Future of lithography technology development path 3.5.1: 157nm lithography further evolution 3.5.2: 3.5.3 huge breakthrough immersion lithography: EUV lithography beam lithography 3.5.5 3.5.4 direct write electron beam devices Chapter 4 Reference Design Mixed-Signal Circuit Design Considerations 4.1 Introduction 4.2 4.3 4.4 Passive Device Modeling Design Methodology 4.5 4.5.1 4.5 reference circuit tests 4.5.3 .2 thickness of thin oxide devices designed low-pressure oxygen device design technology 4.6 4.6.2 4.6.1 current mirror input stage 4.6.3 4.6.4 bandgap reference output stage design process 4.8 4.7 4.8.1 ESD protection for multi-power 4.9 to consider the situation of noise isolation guard ring structure 4. Seller Inventory # F11367

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