Language:Chinese.SoftCover.Pub Date:2019-08-01.publisher:Harbin Institute of Technology Press.description:Paperback. Pub Date: 351 Language: Chinese Publisher: Harbin Institute of Technology Press. Properties. Preparation. Characterization and Devices of Posehene. Circular 3. Part 1 describes the preparation of graphene. which discusses the epitaxial g
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paperback. Condition: New. Paperback. Pub Date: 351 Language: Chinese Publisher: Harbin Institute of Technology Press. Properties. Preparation. Characterization and Devices of Posehene. Circular 3. Part 1 describes the preparation of graphene. which discusses the epitaxial growth of graphene in silicon carbide. and chemical vapor deposition method of graphene film growth. chemical method . Seller Inventory # NR030112
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