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Physics And Modeling Of Mosfets, The: Surface-Potential Model Hisim (International Advances in Solid State Electronics and Technology) - Softcover
Synopsis
This volume provides a timely description of the latest compact Mos transistor models for circuit simulation. The first generation Bsim3 and Bsim4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm Mos transistors. This book discusses the second generation Mos transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the Mos transistor channel in order to give one characterization equation.
"synopsis" may belong to another edition of this title.
- PublisherWspc
- Publication date2008
- ISBN 10 9813203315
- ISBN 13 9789813203310
- BindingPaperback
- LanguageEnglish
- Number of pages380
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Physics And Modeling Of Mosfets, The: Surface-Potential Model Hisim (International Advances in Solid State Electronics and Technology)
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Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim
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Physics and Modeling of Mosfets, The: Surface-Potential Model Hisim
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ISBN 10: 9813203315
ISBN 13: 9789813203310
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The Physics and Modeling of Mosfets: Surface-potential Model Hisim (International Series on Advances in Solid State Electronics and Technology)
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PHYSICS AND MODELING OF MOSFETS, THE
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ISBN 13: 9789813203310
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Kartoniert / Broschiert. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. KlappentextrnrnThis volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capa. Seller Inventory # 449942384
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PHYSICS & MODELING OF MOSFETS, THE
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation. Seller Inventory # 9789813203310
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