Items related to Solid State Device Physics (third edition)
Synopsis
This book documents physics and 7 experiments on electronic devices like never before (to our knowledge). The experiments cover the room-temperature I-V characteristics of an NPN Bipolar Junction Transistor (BJT) C828 in common-base and common-emitter configurations; an n-channel Junction Field Effect Transistor (n-JFET) 2N5457 in common-source configuration; and a Uni-junction Transistor (UJT) 2N493. The other 3 experiments cover the design, construction, and implementation of a common-emitter amplifier using an NPN BJT with voltage-divider bias; the temperature-dependent I-V characteristics of an undoped bulk bar of semiconductor crystal (Ge); and the current-voltage characteristics of a solar cell. The book will be a great aid to teaching and learning for Physics majors. In this 3rd edition, Professor Dr. M. Omar Faruk contributed a chapter on device physics of solar cells using band models known from studies of Nanostructure Physics or Microelectronics for M.S. students majoring in Physics. We have corrected the lapses in the chapter on device physics of the unijunction transistor. We polished the text of other chapters in places.###Dr Sujaul Chowdhury (s.chowdhury-phy@sust.edu) and Dr M. Omar Faruk are Professors in the Department of Physics at Shahjalal University of Science and Technology, Sylhet 3114, Bangladesh. Details about them are available on their departmental web pages at www.sust.edu
"synopsis" may belong to another edition of this title.
Search results for Solid State Device Physics (third edition)
Stock Image
Solid State Device Physics (third edition) (Paperback)
Print on DemandSeller: Grand Eagle Retail, Bensenville, IL, U.S.A.
Seller rating 5 out of 5 stars
Paperback. Condition: new. Paperback. This book documents physics and 7 experiments on electronic devices like never before (to our knowledge). The experiments cover the room-temperature I-V characteristics of an NPN Bipolar Junction Transistor (BJT) C828 in common-base and common-emitter configurations; an n-channel Junction Field Effect Transistor (n-JFET) 2N5457 in common-source configuration; and a Uni-junction Transistor (UJT) 2N493. The other 3 experiments cover the design, construction, and implementation of a common-emitter amplifier using an NPN BJT with voltage-divider bias; the temperature-dependent I-V characteristics of an undoped bulk bar of semiconductor crystal (Ge); and the current-voltage characteristics of a solar cell. The book will be a great aid to teaching and learning for Physics majors.In this 3rd edition, Professor Dr. M. Omar Faruk contributed a chapter on device physics of solar cells using band models known from studies of Nanostructure Physics or Microelectronics for M.S. students majoring in Physics. We have corrected the lapses in the chapter on device physics of the unijunction transistor. We polished the text of other chapters in places. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. Seller Inventory # 9798337089973
Stock Image
Solid State Device Physics (third edition)
Print on DemandSeller: PBShop.store US, Wood Dale, IL, U.S.A.
Seller rating 5 out of 5 stars
PAP. Condition: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Seller Inventory # L0-9798337089973
Stock Image
Solid State Device Physics (third edition)
Print on DemandSeller: PBShop.store UK, Fairford, GLOS, United Kingdom
Seller rating 5 out of 5 stars
PAP. Condition: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Seller Inventory # L0-9798337089973
Buy New
US$ 55.05
US$ 4.43 shipping
Ships from United Kingdom to U.S.A.
Ships from United Kingdom to U.S.A.
Quantity: Over 20 available
Stock Image
Solid State Device Physics (third edition)
Seller: California Books, Miami, FL, U.S.A.
Seller rating 5 out of 5 stars
Condition: New. Seller Inventory # I-9798337089973
Stock Image
Solid State Device Physics (third edition) (Paperback)
Print on DemandSeller: CitiRetail, Stevenage, United Kingdom
Seller rating 5 out of 5 stars
Paperback. Condition: new. Paperback. This book documents physics and 7 experiments on electronic devices like never before (to our knowledge). The experiments cover the room-temperature I-V characteristics of an NPN Bipolar Junction Transistor (BJT) C828 in common-base and common-emitter configurations; an n-channel Junction Field Effect Transistor (n-JFET) 2N5457 in common-source configuration; and a Uni-junction Transistor (UJT) 2N493. The other 3 experiments cover the design, construction, and implementation of a common-emitter amplifier using an NPN BJT with voltage-divider bias; the temperature-dependent I-V characteristics of an undoped bulk bar of semiconductor crystal (Ge); and the current-voltage characteristics of a solar cell. The book will be a great aid to teaching and learning for Physics majors.In this 3rd edition, Professor Dr. M. Omar Faruk contributed a chapter on device physics of solar cells using band models known from studies of Nanostructure Physics or Microelectronics for M.S. students majoring in Physics. We have corrected the lapses in the chapter on device physics of the unijunction transistor. We polished the text of other chapters in places. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Seller Inventory # 9798337089973
Buy New
US$ 60.97
US$ 49.79 shipping
Ships from United Kingdom to U.S.A.
Ships from United Kingdom to U.S.A.
Quantity: 1 available
Stock Image
Solid State Device Physics (third edition) (Paperback)
Print on DemandSeller: AussieBookSeller, Truganina, VIC, Australia
Seller rating 5 out of 5 stars
Paperback. Condition: new. Paperback. This book documents physics and 7 experiments on electronic devices like never before (to our knowledge). The experiments cover the room-temperature I-V characteristics of an NPN Bipolar Junction Transistor (BJT) C828 in common-base and common-emitter configurations; an n-channel Junction Field Effect Transistor (n-JFET) 2N5457 in common-source configuration; and a Uni-junction Transistor (UJT) 2N493. The other 3 experiments cover the design, construction, and implementation of a common-emitter amplifier using an NPN BJT with voltage-divider bias; the temperature-dependent I-V characteristics of an undoped bulk bar of semiconductor crystal (Ge); and the current-voltage characteristics of a solar cell. The book will be a great aid to teaching and learning for Physics majors.In this 3rd edition, Professor Dr. M. Omar Faruk contributed a chapter on device physics of solar cells using band models known from studies of Nanostructure Physics or Microelectronics for M.S. students majoring in Physics. We have corrected the lapses in the chapter on device physics of the unijunction transistor. We polished the text of other chapters in places. This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability. Seller Inventory # 9798337089973
Buy New
US$ 84.92
US$ 37.00 shipping
Ships from Australia to U.S.A.
Ships from Australia to U.S.A.
Quantity: 1 available
Stock Image
Solid State Device Physics (third edition)
Print on DemandSeller: AHA-BUCH GmbH, Einbeck, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book documents physics and 7 experiments on electronic devices like never before (to our knowledge). The experiments cover the room-temperature I-V characteristics of an NPN Bipolar Junction Transistor (BJT) C828 in common-base and common-emitter configurations; an n-channel Junction Field Effect Transistor (n-JFET) 2N5457 in common-source configuration; and a Uni-junction Transistor (UJT) 2N493. The other 3 experiments cover the design, construction, and implementation of a common-emitter amplifier using an NPN BJT with voltage-divider bias; the temperature-dependent I-V characteristics of an undoped bulk bar of semiconductor crystal (Ge); and the current-voltage characteristics of a solar cell. The book will be a great aid to teaching and learning for Physics majors.In this 3rd edition, Professor Dr. M. Omar Faruk contributed a chapter on device physics of solar cells using band models known from studies of Nanostructure Physics or Microelectronics for M.S. students majoring in Physics. We have corrected the lapses in the chapter on device physics of the unijunction transistor. We polished the text of other chapters in places. Seller Inventory # 9798337089973
Buy New
US$ 83.22
US$ 39.30 shipping
Ships from Germany to U.S.A.
Ships from Germany to U.S.A.
Quantity: 2 available
Seller Image
Solid State Device Physics (third edition)
Print on DemandSeller: preigu, Osnabrück, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Solid State Device Physics (third edition) | Sujaul Chowdhury (u. a.) | Taschenbuch | Englisch | 2026 | American Academic Press | EAN 9798337089973 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand. Seller Inventory # 138233860
Buy New
US$ 64.82
US$ 78.60 shipping
Ships from Germany to U.S.A.
Ships from Germany to U.S.A.
Quantity: 5 available