Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors

Language: English

Published by Tudpress Verlag Der Wissenschaften Gmbh, Tudpress Verlag Der Wissenschaften Gmbh Nov 2015, 2015

395908028X / 9783959080286

  • Softcover
  • New
See all details

Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000

5-star seller

AbeBooks seller since January 23, 2017

View this seller's items
Softcover

Condition: New

US$ 39.16

US$ 69.56 shipping 
Ships from Germany to U.S.A.

Quantity: 1 available

Add to basket
Free 30-day returns

Item description from seller

This item is printed on demand - Print on Demand Titel. Neuware -Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.TUDpress, Hüblerstraße 26, 01309 Dresden 232 pp. Englisch.

Seller Inventory # 9783959080286

Title
Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors
Author
Andreas Pawlak
Publisher
Tudpress Verlag Der Wissenschaften Gmbh, Tudpress Verlag Der Wissenschaften Gmbh Nov 2015
Publication year
2015
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
395908028X
ISBN 13
9783959080286
Item weight
342 grams
Dimensions
210x148x15 mm

buchversandmimpf2000

Emtmannsberg, BAYE, Germany

5-star seller

AbeBooks seller since January 23, 2017

Shipping rates from Germany to U.S.A.

Item60 to 60 business days60 to 60 business days
First itemUS$ 69.56US$ 86.95
Delivery times are set by sellers and vary by carrier and location. Orders passing through Customs may face delays and buyers are responsible for any associated duties or fees. Sellers may contact you regarding additional charges to cover any increased costs to ship your items.

Payment methods

  • Visa
  • Mastercard
  • American Express
  • Apple Pay
  • Google Pay
  • Check
  • Paypal

Store description

Impressum Thorsten Retsch Buchversand Mimpf2000 Oberölschnitz 16 95517 Emtmannsberg Deutschland Telefon: 09209-2023188 Email: mimpf2000@online.de USt-ID-Nr.: DE 235096871 Wir führen gebrauchte Bücher aus allen Sparten der Literatur

Specialty

Modernes Antiquariat - Bücher von 1960 bis heute

Seller's business information

buchversandmimpf2000

Germany