Advances in Non-volatile Memory and Storage Technology
Language: English
Published by Woodhead Publishing, 2019
Series: Book 121 of 203 - Woodhead Publishing Series in Electronic and Optical Materials
- Softcover
- New

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- Title
- Advances in Non-volatile Memory and Storage Technology
- Author
- Nishi, Yoshio (EDT); Magyari-kope, Blanka (EDT)
- Publisher
- Woodhead Publishing
- Publication year
- 2019
- Condition
- New
- Binding
- Soft cover
- Language
- English
- ISBN 10
- 008102584X
- ISBN 13
- 9780081025840
- Edition
- 2nd Edition
- Series
- Book 121 of 203: Woodhead Publishing Series in Electronic and Optical Materials
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included.
This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.
- Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories
- Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses
- Examines improvements to flash technology, charge trapping and resistive random access memory
"Synopsis" may belong to another edition of this title.
About the Author
Blanka Magyari-Köpe received her Ph.D. degree in physics from the Royal Institute of Technology, Stockholm, Sweden, in 2003. Since 2006, she has been an engineering Research Associate and from 2011 a Senior Research Engineer in the Department of Electrical Engineering at Stanford University. Prior to this position she was a postdoctoral researcher in the Department of Materials Science and Engineering, University of California, Los Angeles
"About the title" may belong to another edition of this title.
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