The Blue Laser Diode : GaN based Ligth Emitters and Lasers

Nakamura, Shuji /Fasol, Gerhard

ISBN 10: 3540615903 / ISBN 13: 9783540615903

Published by Springer-Verlag GmbH & Co. KG, 1997

About this Item

Zustand: Gut | Seiten: 359 | Sprache: Japanisch | Produktart: Bücher | Keine Beschreibung verfügbar.

Seller Inventory # 621593/3

Bibliographic Details

• Title: The Blue Laser Diode : GaN based Ligth Emitters and Lasers
• Publisher: Springer-Verlag GmbH & Co. KG
• Publication Date: 1997
• Language: English
• ISBN 10: 3540615903
• ISBN 13: 9783540615903
• Binding: Hardcover
• Condition: Gut
• Seller catalogs:
  • Bücher

About this title

Synopsis

The development of a blue semiconductor laser on the basis of GaN by Shuji Nakamura opens a new field for the applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time in one substrate material, lasers with various wavelenghts, ranging from red through yellow and green to blue, can be formed. This fact together with their high efficiency make GaN based lasers very useful for a wide spectrum of applications. Additionaly, the realization of a unique and successful concept of research and development is discussed.

From the Back Cover

Shuji Nakamura developed the first commercially available blue and green light emitting diodes and the first blue semiconductor laser based on GaN. GaN and its related compounds allow the fabrication of highly efficient light emitters and lasers ranging from red through yellow and green to blue in a single material. In this book the scientific basis of GaN light emitting devices and the physical concept and basic manufacturing technology of these new blue light emitting diodes and laser diodes are discussed. The breakthrough in GaN technology opens many new commercial applications for semiconductors, including displays, road and railway signalling, lighting, scanners, optical data storage, and much more. The new application field of power devices is also discussed. This second edition is not only updated but also significantly enlarged. The whole spectrum of GaN related materials, processing and application problems is contained, thus making this book the most comprehensive basic book in the field. It also tells the fascinating story of the extremely successful realization of Nakamura's research and development concept. The book will appeal to both researchers and engineers.