Title: The Blue Light-Emitting Diodes: Fabrication and Characterization of Light-Emitting Diodes with Varying InGaN/GaN Multiple Quantum-Well Structures
Publisher: VDM Verlag Dr. M�ller
Publication Date: 2010
Language: English
ISBN 10: 3639268199
ISBN 13: 9783639268195
Binding: Soft cover
Condition: New
Weight: 359 grams

About this title

Synopsis

In this book, I have optimized the growth of n- and p-GaN films, and high quality InGaN/GaN multiple quantum wells (MQWs) on sapphire (0001) substrate by a low pressure metal-organic chemical vapour deposition and have fabricated high brightness InGaN/GaN MQW light-emitting diodes (LEDs) under optimum conditions. To improve quantum efficiency which is generally poor in the conventional rectangular-shaped QWs due to spatial indirect recombination induced by internal piezoelectric field, we proposed a possibility of quantum dot (QD) engineering with triangular-shaped band structure in the InGaN/GaN QWs. The structural and optical properties of the InGaN/GaN MQWs with different threading dislocation densities were also investigated. The effects of Si-doped n-GaN and Mg-doped p-GaN layers on the electrical and optical properties of the InGaN/GaN MQW LEDs were investigated and optimized under various growth parameters.

About the Author

I got the degree of Ph.D. in Dept. of Chemical Engineering and Semiconductor Physics Research Centers, Chonbuk National University, South Korea. I worked at the Venture Business Laboratory of the University of Tokushima, Japan. I have studied on growth and fabrication of III-nitrides semiconductor such as LEDs and LDs.

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