The Blue Light-Emitting Diodes

Rak-Jun Choi

ISBN 10: 3639268199 / ISBN 13: 9783639268195

Published by VDM Verlag Dr. Müller E.K. Nov 2012, 2012

About this Item

This item is printed on demand - it takes 3-4 days longer - Neuware -In this book, I have optimized the growth of n- and p-GaN films, and high quality InGaN/GaN multiple quantum wells (MQWs) on sapphire (0001) substrate by a low pressure metal-organic chemical vapour deposition and have fabricated high brightness InGaN/GaN MQW light-emitting diodes (LEDs) under optimum conditions. To improve quantum efficiency which is generally poor in the conventional rectangular-shaped QWs due to spatial indirect recombination induced by internal piezoelectric field, we proposed a possibility of quantum dot (QD) engineering with triangular-shaped band structure in the InGaN/GaN QWs. The structural and optical properties of the InGaN/GaN MQWs with different threading dislocation densities were also investigated. The effects of Si-doped n-GaN and Mg-doped p-GaN layers on the electrical and optical properties of the InGaN/GaN MQW LEDs were investigated and optimized under various growth parameters. 156 pp. Englisch.

Seller Inventory # 9783639268195

Bibliographic Details

• Title: The Blue Light-Emitting Diodes
• Publisher: VDM Verlag Dr. Müller E.K. Nov 2012
• Publication Date: 2012
• Language: English
• ISBN 10: 3639268199
• ISBN 13: 9783639268195
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 10D millimeters 220 millimeters width by 150 millimeters height by 10 millimeters depth
• Weight: 250 grams

About this title

Synopsis

In this book, I have optimized the growth of n- and p-GaN films, and high quality InGaN/GaN multiple quantum wells (MQWs) on sapphire (0001) substrate by a low pressure metal-organic chemical vapour deposition and have fabricated high brightness InGaN/GaN MQW light-emitting diodes (LEDs) under optimum conditions. To improve quantum efficiency which is generally poor in the conventional rectangular-shaped QWs due to spatial indirect recombination induced by internal piezoelectric field, we proposed a possibility of quantum dot (QD) engineering with triangular-shaped band structure in the InGaN/GaN QWs. The structural and optical properties of the InGaN/GaN MQWs with different threading dislocation densities were also investigated. The effects of Si-doped n-GaN and Mg-doped p-GaN layers on the electrical and optical properties of the InGaN/GaN MQW LEDs were investigated and optimized under various growth parameters.

About the Author

I got the degree of Ph.D. in Dept. of Chemical Engineering and Semiconductor Physics Research Centers, Chonbuk National University, South Korea. I worked at the Venture Business Laboratory of the University of Tokushima, Japan. I have studied on growth and fabrication of III-nitrides semiconductor such as LEDs and LDs.