CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications: Volume 1155 (Paperback)

Alexander A. Demkov

ISBN 10: 1107408326 / ISBN 13: 9781107408326

Published by Cambridge University Press, Cambridge, 2014

About this Item

Paperback. To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.

Seller Inventory # 9781107408326

Bibliographic Details

• Title: CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications: Volume 1155 (Paperback)
• Publisher: Cambridge University Press, Cambridge
• Publication Date: 2014
• Language: English
• ISBN 10: 1107408326
• ISBN 13: 9781107408326
• Binding: Paperback
• Condition: new

About this title

Synopsis

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.