Title: CMOS SRAM Conception et analyse d'une cellule SRAM � faible fuite et � grande vitesse (French Edition)
Publisher: Editions Notre Savoir
Publication Date: 2024
Language: French
ISBN 10: 6208332001
ISBN 13: 9786208332006
Binding: Soft cover
Condition: New

About this title

Synopsis

Ce travail pr�sente une nouvelle cellule SRAM 5T et 6T � extr�mit� unique. Ce transistor est une cellule � haute densit� ou prend moins de place qu'une cellule SRAM 6T conventionnelle. Le courant de fuite de cette cellule est tr�s faible par rapport aux autres cellules 5T ou 6T conventionnelles. Un circuit de pr�charge est n�cessaire pour cette cellule, comme c'est le cas pour la cellule SRAM 6T conventionnelle. Cette cellule est �galement �conome en �nergie. Les r�sultats montrent �galement que les donn�es stock�es dans cette cellule sont tr�s stables. Il est toujours possible d'am�liorer tout type de circuit ou d'application. La configuration propos�e peut �tre am�lior�e � l'aide de diverses techniques. Nous pouvons modifier le rapport d'aspect de la cellule pour obtenir de meilleurs r�sultats. Nous pouvons appliquer le gating d'horloge pour un circuit �conome en �nergie. Nous pouvons am�liorer le circuit p�riph�rique pour de meilleures performances.

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