Charged Semiconductor Defects

Language: English

Published by Springer London Dez 2008, 2008

1848820585 / 9781848820586

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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.

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This item is printed on demand - it takes 3-4 days longer - Neuware -Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of 'defect engineering'. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. 'Charged Defects in Semiconductors' details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters. 308 pp. Englisch. …

Seller Inventory # 9781848820586

Title
Charged Semiconductor Defects
Author
Meredith C. Kratzer
Publisher
Springer London Dez 2008
Publication year
2008
Condition
Neu
Binding
Buch
Language
English
ISBN 10
1848820585
ISBN 13
9781848820586
Item weight
629 grams
Dimensions
241x160x22 mm

BuchWeltWeit Ludwig Meier e.K.

Bergisch Gladbach, Germany

5-star seller

AbeBooks seller since January 11, 2012

Shipping rates from Germany to U.S.A.

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BuchWeltWeit Ludwig Meier e.K.

Germany