Charged Semiconductor Defects

Language: English

Published by Springer London, Springer London Okt 2010, 2010

1849968209 / 9781849968201

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This item is printed on demand - Print on Demand Titel. Neuware -Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of ¿defect engineering¿. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. ¿Charged Defects in Semiconductors¿ details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 308 pp. Englisch. …

Seller Inventory # 9781849968201

Title
Charged Semiconductor Defects
Author
Meredith C. Kratzer
Publisher
Springer London, Springer London Okt 2010
Publication year
2010
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
1849968209
ISBN 13
9781849968201
Item weight
470 grams
Dimensions
235x155x17 mm

buchversandmimpf2000

Emtmannsberg, BAYE, Germany

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