Charged Semiconductor Defects

Meredith C. Kratzer

ISBN 10: 1848820585 / ISBN 13: 9781848820586

Published by Springer London, Springer Dez 2008, 2008

About this Item

This item is printed on demand - Print on Demand Titel. Neuware -Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of ¿defect engineering¿. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. ¿Charged Defects in Semiconductors¿ details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 308 pp. Englisch.

Seller Inventory # 9781848820586

Bibliographic Details

• Title: Charged Semiconductor Defects
• Publisher: Springer London, Springer Dez 2008
• Publication Date: 2008
• Language: English
• ISBN 10: 1848820585
• ISBN 13: 9781848820586
• Binding: Buch
• Condition: Neu
• Dimensions: 241W x 160H x 22D millimeters 241 millimeters width by 160 millimeters height by 22 millimeters depth
• Weight: 629 grams

About this title

Synopsis

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

About the Author

Edmund Seebauer is currently Head of Chemical and Biomolecular Engineering at the University of Illinois at Urbana-Champaign. Since 1987 he has been the Chair or co-Chair of numerous sessions on surface chemisty, materials chemistry and microelectronics fabrication for national meetings of AIChE, AVS and MRS.

Meredith Kratzer is working towards a PhD in Chemical & Biomolecular Engineering at the University of Illinois at Urbana-Champaign. She received her B.S. (cum laude) in Chemical Engineering from Cornell University.