Soi Circuit Design Concepts
Language: English
Published by Springer, 2000
- Hardcover
- Used
Seller: ThriftBooks-Dallas, Dallas, TX, U.S.A.ThriftBooks-Dallas
AbeBooks seller since July 2, 2009
Condition: Used - Very good
US$ 39.88
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Add to basketItem description from seller
May have limited writing in cover pages. Pages are unmarked. ~ ThriftBooks: Read More, Spend Less.
Seller Inventory # G0792377621I4N00
- Title
- Soi Circuit Design Concepts
- Author
- Bernstein, Kerry; Rohrer, Norman J.
- Publisher
- Springer
- Publication year
- 2000
- Condition
- Very Good
- Dust jacket
- No Jacket
- Binding
- Hardcover
- Language
- English
- ISBN 10
- 0792377621
- ISBN 13
- 9780792377627
- Item weight
- 1.2 pounds
Market demand for microprocessor performance has motivated continued scaling of CMOS through a succession of lithography generations. Quantum mechanical limitations to continued scaling are becoming readily apparent. Partially Depleted Silicon-on-Insulator (PD-SOI) technology is emerging as a promising means of addressing these limitations. It also introduces additional design complexity which must be well understood.
SOI Circuit Design Concepts first introduces the student or practicing engineer to SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms which are observed in common high-speed microprocessor designs. Rules of thumb and comparisons to conventional bulk CMOS are offered to guide implementation. SOI's ultimate advantage, however, may lie in the unique circuit topologies it supports; a number of these novel new approaches are described as well.
SOI Circuit Design Concepts draws upon the latest industry literature as well as the firsthand experiences of its authors. It is an ideal introduction to the concepts of governing SOI use and provides a firm foundation for further study of this exciting new technology paradigm.
"Synopsis" may belong to another edition of this title.
From the Back Cover
Market demand for microprocessor performance has motivated continued scaling of CMOS through a succession of lithography generations. Quantum mechanical limitations to continued scaling are becoming readily apparent. Partially Depleted Silicon-on-Insulator (PD-SOI) technology is emerging as a promising means of addressing these limitations. It also introduces additional design complexity which must be well understood.
SOI Circuit Design Concepts first introduces the student or practicing engineer to SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms which are observed in common high-speed microprocessor designs. Rules of thumb and comparisons to conventional bulk CMOS are offered to guide implementation. SOI's ultimate advantage, however, may lie in the unique circuit topologies it supports; a number of these novel new approaches are described as well.
SOI Circuit Design Concepts draws upon the latest industry literature as well as the firsthand experiences of its authors. It is an ideal introduction to the concepts of governing SOI use and provides a firm foundation for further study of this exciting new technology paradigm.
"About the title" may belong to another edition of this title.
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