SOI Circuit Design Concepts
Language: English
Published by Springer, 2007
- Softcover
- New

Seller: Biblios, frankfurt am main, hessen, GermanyBiblios
AbeBooks seller since September 10, 2024
Condition: New
US$ 59.62
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Add to basketItem description from seller
pp. 244.
Seller Inventory # 18285209
- Title
- SOI Circuit Design Concepts
- Author
- Bernstein Kerry Rohrer Norman J.
- Publisher
- Springer
- Publication year
- 2007
- Condition
- New
- Binding
- Soft cover
- Language
- English
- ISBN 10
- 0387740996
- ISBN 13
- 9780387740997
Market demand for microprocessor performance has motivated continued scaling of CMOS through a succession of lithography generations. Quantum mechanical limitations to continued scaling are becoming readily apparent. Partially Depleted Silicon-on-Insulator (PD-SOI) technology is emerging as a promising means of addressing these limitations. It also introduces additional design complexity which must be well understood.
SOI Circuit Design Concepts first introduces the student or practicing engineer to SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms which are observed in common high-speed microprocessor designs. Rules of thumb and comparisons to conventional bulk CMOS are offered to guide implementation. SOI's ultimate advantage, however, may lie in the unique circuit topologies it supports; a number of these novel new approaches are described as well.
SOI Circuit Design Concepts draws upon the latest industry literature as well as the firsthand experiences of its authors. It is an ideal introduction to the concepts of governing SOI use and provides a firm foundation for further study of this exciting new technology paradigm.
"Synopsis" may belong to another edition of this title.
From the Back Cover
Market demand for microprocessor performance has motivated continued scaling of CMOS through a succession of lithography generations. Quantum mechanical limitations to continued scaling are becoming readily apparent. Partially Depleted Silicon-on-Insulator (PD-SOI) technology is emerging as a promising means of addressing these limitations. It also introduces additional design complexity which must be well understood.
SOI Circuit Design Concepts first introduces the student or practicing engineer to SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms which are observed in common high-speed microprocessor designs. Rules of thumb and comparisons to conventional bulk CMOS are offered to guide implementation. SOI's ultimate advantage, however, may lie in the unique circuit topologies it supports; a number of these novel new approaches are described as well.
SOI Circuit Design Concepts draws upon the latest industry literature as well as the firsthand experiences of its authors. It is an ideal introduction to the concepts of governing SOI use and provides a firm foundation for further study of this exciting new technology paradigm.
"About the title" may belong to another edition of this title.
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