Combination of Axial Strain Tuning and Gate Bias Tuning for Carbon Nano Tube Resonators

Vollmann, Morten

ISBN 10: 3866288557 / ISBN 13: 9783866288553

Published by Hartung & Gorre, 2025

About this Item

Seller Inventory # I-9783866288553

Bibliographic Details

• Title: Combination of Axial Strain Tuning and Gate Bias Tuning for Carbon Nano Tube Resonators
• Publisher: Hartung & Gorre
• Publication Date: 2025
• Language: English
• ISBN 10: 3866288557
• ISBN 13: 9783866288553
• Binding: Soft cover
• Condition: New

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Synopsis

Carbon nanotube (CNT) resonators exhibit exceptional potential for high-frequency and large-range eigenfrequency tuning, yet practical demonstrations have long been limited by the difficulty of precisely applying axial strain. This thesis overcomes that challenge by introducing a custom micro-electro-mechanical system (MEMS) with chevron-style thermal actuators capable of displacing the CNT`s clamping ends and generating pure tensile strain levels up to 1.4%. By combining this axial strain with gate-bias-induced strain, frequency tuning of 67MHz was achieved, equivalent to over 150% relative tuning, reaching eigenfrequencies over 120MHz across multiple devices. Straining experiments on the new MEMS platform included the analysis of the static strain response with gauge factors up to 108 for low gate biases, isolating the axial straining effect from gate bias straining and the combination of both. A central contribution of this work is the detailed modelling of CNT resonators subject to uniaxial and/or gate bias induced straining. The modelling framework employs solutions to the nonlinear Duffing equation via harmonic balancing, a technique that captures both amplitude and phase behaviour of the resonator´s motional current. By including the transfercharacteristic directly into to modelling of the current, even more complex and asymmetric phases and different shapes of resonance peak were explained. This approach proves indispensable for accurately describing the interplay between electrostatic (gate) and mechanical (axial) strain, enabling detailed predictions of device performance. This has been possible only due to the knowledge of applied strain from the characterized actuators. The framework also allowed for the quantification of maximum axial strain of 1.4% before the CNT slipped from the electrodes.