Compact modeling of spintronic devices | A physical description of spin-based transistors for electronic applications

Massimo Spina

ISBN 10: 3848492741 / ISBN 13: 9783848492749

Published by LAP Lambert Academic Publishing, 2012

About this Item

Compact modeling of spintronic devices | A physical description of spin-based transistors for electronic applications | Massimo Spina | Taschenbuch | Englisch | LAP Lambert Academic Publishing | EAN 9783848492749 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

Seller Inventory # 106490117

Bibliographic Details

• Title: Compact modeling of spintronic devices | A physical description of spin-based transistors for electronic applications
• Publisher: LAP Lambert Academic Publishing
• Publication Date: 2012
• Language: English
• ISBN 10: 3848492741
• ISBN 13: 9783848492749
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 7D millimeters 220 millimeters width by 150 millimeters height by 7 millimeters depth
• Weight: 192 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

Spintronics is an area of electronics that studies the design of electronic devices based on the spin properties of electrons, taking advantage of their full potential. To date, despite the extended theoretical work done on this class of components, models are mainly physical and, due to their extreme complexity, cannot be implemented in circuit simulators. The aim of this work is to address the critical problems of modeling spintronic devices in a compact form. The main goal is to make a bridge between a purely physical description and a more electrical counterpart of spintronic elements in order to enable their use in Computer Assisted Design tools, just as for CMOS devices. The first part of the book gives an introduction to the different kinds of spin-orbit interactions, the materials used for realizing spintronic devices and the main spin-based devices currently developed. The second part is then dedicated to the modeling of simple transistor structures where the current depends on spin-polarized carriers. Moreover, a brief outlook on possible future spintronic devices is given.

About the Author

Massimo Spina was born in Italy, in 1986. In 2009 he received his M.Sc. degree in Micro and NanoTechnologies for Integrated Systems from Ecole Polytechnique Fédérale de Lausanne, Institut National Polytechnique de Grenoble and Politecnico di Torino.He is currently pursuing his Phd studies at the Laboratory of Physics of Complex Matter at EPFL.