Compound Semiconductor Materials and Devices (Synthesis Lectures on Emerging Engineering Technologies)

Zhaojun Liu; Tongde Huang; Qiang Li; Xing Lu; Xinbo Zou

ISBN 10: 1627058524 / ISBN 13: 9781627058520

Published by Morgan & Claypool Publishers, 2016

About this Item

This book has been in storage since publication and is unread. Hence the description as new .

Synopsis: Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials.

The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors.

Seller Inventory # 2305340

Bibliographic Details

• Title: Compound Semiconductor Materials and Devices (Synthesis Lectures on Emerging Engineering Technologies)
• Publisher: Morgan & Claypool Publishers
• Publication Date: 2016
• Language: English
• ISBN 10: 1627058524
• ISBN 13: 9781627058520
• Binding: Soft cover
• Condition: As New
• Seller catalogs:
  • Information Technology
  • Science & Technology

About this title

Synopsis

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials.The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate.With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

About the Author

Zhaojun Liu, Ph.D., is currently an assistant professor with Sun Yat-sen University-Carnegie Mellon University Joint Institute of Engineering (JIE) and Shunde International Joint Research Institute (JRI). He received the B.Eng. degree in Electrical Engineering and Automation from the Hebei University of Technology in 2003, the M.Phil. degree in Physical Electronics from Nankai University in 2007, and the Ph.D. degree in Electronic and Computer Engineering (ECE) from the Hong Kong University of Science and Technology (HKUST) in 2011. He was a research assistant with the State Key Laboratory on Advanced Displays and Optoelectronics Technologies (PSKL) at HKUST in Oct. 2006-Apr. 2007. He was a postdoctoralfellow with the Photonics Technology Center (PTC) at HKUST in Jan. 2011-July 2013. He was a visiting assistant professor with the ECE department at HKUST in Aug. 2013 Sept. 2014. He is an adjunct assistant professor with ECE department at HKUST since Sept. 2014 and a visiting professor with ECE department at Carnegie Mellon University since Dec. 2015. Dr. Liu is the core member of the "Pearl River Talent Plan" 5th Innovation Team of Guangdong Province. His research interests focused on (1) GaN LED micro-display, solid-state lighting and monolithic integration with GaN HEMTs; (2) Wearable Electronic & Photonic devices, and (3) 2D materials & devices.