Computer Memories 2: Static Random-Access Memory (ISTE Invoiced)

Memory, the second function of a computer, has gradually become more complex in order to meet growing needs in terms of capacity, speed, security and energy efficiency. It takes the form of a component or system, such as a memory subassembly or a mass storage device.

For several decades, there has been a strong trend towards integrating memory directly into the processor under the term embedded memory, of which cache memory is a typical example. Understanding its internal mechanisms and interfacing is essential for mastering the operation of a computer and programming it efficiently.

Computer Memories 2 focuses on the static storage cell and its associated component, known as static random-access memory. The first part presents the main temporal characteristics of a generic random-access memory, as well as its electrical and mechanical properties, including aspects related to encapsulation. The second part focuses on the study of the first category of random-access semiconductor memory: asynchronous static memory, commonly referred to by the acronym SRAM (static random-access memory). The book details its temporal, electrical and mechanical characteristics, providing an in-depth understanding of its operation and technical specifications.

Philippe Darche is Lecturer in Computer Science at the University Institute of Technology (IUT) of Paris – Rives de Seine and Researcher in the Distributed Algorithms and Systems (DeLyS) team at LIP6, Sorbonne University, France. He is also the author of fifteen books on computer architecture.