Language:Chinese.Paperback. Pub Date: 2024-01 Pages: 428 Publisher: China Machinery Industry Press Core Technology of Silicon Carbide Device Process has 9 chapters. focusing on the silicon carbide (SiC) device process. focusing on key process technologies such as SiC material growth. surface cleaning. ohmic contact. Schottky contact. ion implantation. dry etching. electrolyte preparation. as well as high-power SiC unipolar and bipolar switching devices. SiC nanostructure manufacturing and dev.

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Bibliographic Details

Title: Core technology of silicon carbide device process Taking silicon carbide device process as the core. the key process technologies of silicon carbide are explained in detail(Chinese Edition)
Publisher: Mechanical Industry Press
Publication Date: 2024
Language: English
ISBN 10: 7111741889
ISBN 13: 9787111741886
Binding: paperback
Condition: New

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Language:Chinese.paperback.Pub Date:2024-01.publisher:Mechanical Industry Press.description:Paperback. Pub Date: 2024-01 Pages: 428 Publisher: China Machinery Industry Press Core Technology of Silicon Carbide Device Process has 9 chapters. focusing on the silicon carbide (SiC) device process. focusing on key process technologies such as SiC

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