Defects in SiO2 and Related Dielectrics: Science and Technology

Paccioni, G. / Skuja, L. (Herausgeber)

ISBN 10: 0792366859 / ISBN 13: 9780792366850

Published by Dordrecht / Boston / London. Kluwer Academic Publishers. 2000., 2000

About this Item

Hardcover 624 pages. with Figures and tables. In good clean, solid condition. Nato Science Series II. Mathematics, Physics and Chemistry Vol. 2. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000. in englischer Sprache (in english).

Seller Inventory # P5-0030

Bibliographic Details

• Title: Defects in SiO2 and Related Dielectrics: Science and Technology
• Publisher: Dordrecht / Boston / London. Kluwer Academic Publishers. 2000.
• Publication Date: 2000
• Language: English
• ISBN 10: 0792366859
• ISBN 13: 9780792366850
• Binding: Softcover
• Seller catalogs:
  • PHYSIK

About this title

Synopsis

Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.
This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.