Defects in SiO2 and Related Dielectrics: Science and Technology

Gianfranco Pacchioni (u. a.)

ISBN 10: 0792366867 / ISBN 13: 9780792366867

Published by Springer, 2000

About this Item

Defects in SiO2 and Related Dielectrics: Science and Technology | Gianfranco Pacchioni (u. a.) | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2000 | Springer | EAN 9780792366867 | Verantwortliche Person für die EU: Springer Netherlands, Haberstr. 7, 69126 Heidelberg, buchhandel-buch[at]springer[dot]com | Anbieter: preigu.

Seller Inventory # 101889627

Bibliographic Details

• Title: Defects in SiO2 and Related Dielectrics: Science and Technology
• Publisher: Springer
• Publication Date: 2000
• Language: English
• ISBN 10: 0792366867
• ISBN 13: 9780792366867
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 235W x 155H x 34D millimeters 235 millimeters width by 155 millimeters height by 34 millimeters depth
• Weight: 949 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.
This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.