Design of RF CMOS Low Noise Amplifiers

Language: English

Published by LAP LAMBERT Academic Publishing Mär 2010, 2010

3838349040 / 9783838349046

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This item is printed on demand - Print on Demand Titel. Neuware -Design of RF CMOS Low Noise Amplifiers presents the results of research on a gain-boosted common-gate RF low noise amplifier (LNA) in CMOS technology. The book covers noise analysis, design techniques, prototyping of the LNA, as well as broadband modeling for on-chip spiral differential inductors. Beginning with a technical review of LNA architectures and inductor modeling techniques, the authors then introduce a scalable lumped circuit model for octagonal differential inductors. The effect of high frequency current crowding, i.e. proximity effect, is taken into consideration in the lumped circuit model. Subsequently, the book offers comprehensive noise analysis of the LNA and discusses design techniques for noise reduction. Measurement results for a 2.4GHz CMOS LNA and conclusions are included. The book is intended for anyone who is interested in learning essentials of RF CMOS LNA design and basic mathematics of on-chip inductor broadband modeling. The book is also beneficial to engineers and researchers in CMOS RFIC design - especially for WLAN, Bluetooth, and emerging wireless communication applications.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 184 pp. Englisch.

Seller Inventory # 9783838349046

Title
Design of RF CMOS Low Noise Amplifiers
Author
Changgui Lin
Publisher
LAP LAMBERT Academic Publishing Mär 2010
Publication year
2010
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3838349040
ISBN 13
9783838349046
Item weight
292 grams
Dimensions
220x150x12 mm

buchversandmimpf2000

Emtmannsberg, BAYE, Germany

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