The Development in Gallium-Nitrides Semiconductors Based Technology

Language: English

Published by LAP LAMBERT Academic Publishing Aug 2018, 2018

6139851661 / 9786139851669

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This item is printed on demand - Print on Demand Titel. Neuware -III-nitrides semiconductors, specifically the GaN-based materials, including the binary GaN and related alloys with InN and AlN, such as the ternary AlGaN and InGaN as well as the quaternary InAlGaN have been intensively investigated in recent years because of the potential applications for optoelectronic devices operating in short wavelength spectral range and in high power and high temperature electronic devices. GaN-based materials are also ideal for the fabrication of high responsive and visible blind UV detectors because of the unique properties that encompass wide and direct band gap, high absorption coefficients, and sharp cutoff of the wavelength detection. The high breakdown voltage and high saturation velocity also enable the use of GaN-based materials for high-speed device operation and high power applications, such as power amplifiers for wireless base stations, low noise amplifiers, and high power switches. Sensing devices are another important application of the GaN-based materials, especially in harsh environments owing to the high thermal and chemical stability of these materials.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 104 pp. Englisch. …

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Bibliographic details

Title
The Development in Gallium-Nitrides Semiconductors Based Technology
Author
Mansour Farhan
Publisher
LAP LAMBERT Academic Publishing Aug 2018
Publication year
2018
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
6139851661
ISBN 13
9786139851669
Item weight
173 grams
Dimensions
220x150x7 mm

buchversandmimpf2000

Emtmannsberg, BAYE, Germany

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