Development of p-type oxide TFTs based on SnO and its alloys

In spite of the recent p-type oxide TFTs developments based on SnO and CuO, the results achieved so far refer to devices processed at high temperatures and are limited by a low hole mobility and a low On-Off ratio and still there is no report on p-type oxide TFTs with performance similar to n-type TFTs. Achieving high performance p-type oxide TFTs will definitely promote a new era for electronics in rigid and flexible substrates, away from silicon. None of the few reported p-channel oxide TFTs is suitable for practical applications, which demand significant improvements in the device engineering to meet the real-world electronic requirements, where low processing temperatures together with high mobility and high On-Off ratio are required for TFT and CMOS applications. The present book presents the study and optimization of p-type TFTs based on oxide semiconductors deposited by r.f. magnetron sputtering without intentional substrate heating. In this work several p-type oxide semiconductors were studied and optimized based on undoped SnO, Cu-doped SnO and In-doped SnO.

Raquel Barros received her degree in Physics Engineering from Universidade de Lisboa, her Master in Microelectronic Engineering and Nanotechnologies and PhD in Nanotechnology and Nanoscience from Universidade Nova de Lisboa. She is currently working on the development of transparent Microelectromechanical systems to apply in biological systems.