In low-power-high-speed electronic circuits, devices with steeper characteristics are required. The device's speed increases with steeper IV characteristics, and low power is achieved through operating the device in the subthreshold region. The measurement of currents in the subthreshold region is a big challenge. To achieve high switching, we need to propose a new device with the combined advantages of FinFET and TFET. This thesis proposed a hybrid device with an SS value < 25 mV/Dec. Synopsis Centaurus TCAD is used in this thesis for device modelling and characterisation.

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