Doping Engineering for Front-End Processing: Volume 1070 (Paperback)

B.J. Pawlak

ISBN 10: 1107408547 / ISBN 13: 9781107408548

Published by Cambridge University Press, Cambridge, 2014

About this Item

Paperback. Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.

Seller Inventory # 9781107408548

Bibliographic Details

• Title: Doping Engineering for Front-End Processing: Volume 1070 (Paperback)
• Publisher: Cambridge University Press, Cambridge
• Publication Date: 2014
• Language: English
• ISBN 10: 1107408547
• ISBN 13: 9781107408548
• Binding: Paperback
• Condition: new

About this title

Synopsis

Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

Book Description

The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.