Dynamic Ram

Muzaffer A. Siddiqi

ISBN 10: 143989373X / ISBN 13: 9781439893739

Published by CRC Press, 2012

About this Item

: Dynamic RAM: Technology Advancements es un libro que explora los avances tecnológicos en la memoria de acceso aleatorio dinámica (DRAM). El libro cubre temas como los principios de funcionamiento de la DRAM, las diferentes arquitecturas de DRAM y las últimas tendencias en tecnología DRAM. Está dirigido a estudiantes, investigadores e ingenieros interesados en la tecnología de memoria. EAN: 9781439893739 Tipo: Libros Categoría: Tecnología Título: Dynamic Ram Autor: Muzaffer A. Siddiqi Idioma: en Páginas: 382 Formato: Tapa dura Año de publicación: 2012.

Seller Inventory # Happ-2026-07-02-d638dbfe

Bibliographic Details

• Title: Dynamic Ram
• Publisher: CRC Press
• Publication Date: 2012
• Language: English
• ISBN 10: 143989373X
• ISBN 13: 9781439893739
• Binding: Hardcover
• Condition: Bueno

About this title

Synopsis

Because of their widespread use in mainframes, PCs, and mobile audio and video devices, DRAMs are being manufactured in ever increasing volume, both in stand-alone and in embedded form as part of a system on chip. Due to the optimum design of their components―access transistor, storage capacitor, and peripherals―DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the technology used for its constituent components and their interconnections. However, only a few books are available on semiconductor memories in general and fewer on DRAMs.

Dynamic RAM: Technology Advancements provides a holistic view of the DRAM technology with a systematic description of the advancements in the field since the 1970s, and an analysis of future challenges.

Topics Include:

• DRAM cells of all types, including planar, three-dimensional (3-D) trench or stacked, COB or CUB, vertical, and mechanically robust cells using advanced transistors and storage capacitors
• Advancements in transistor technology for the RCAT, SCAT, FinFET, BT FinFET, Saddle and advanced recess type, and storage capacitor realizations
• How sub 100 nm trench DRAM technologies and sub 50 nm stacked DRAM technologies and related topics may lead to new research
• Various types of leakages and power consumption reduction methods in active and sleep mode
• Various types of SAs and yield enhancement techniques employing ECC and redundancy

A worthwhile addition to semiconductor memory research, academicians and researchers interested in the design and optimization of high-density and cost-efficient DRAMs may also find it useful as part of a graduate-level course.

About the Author

Siddiqi, Muzaffer A.