Electrical Activation Studies of Ion Implanted Gallium Nitride

A comprehensive and systematic electrical activation study of Si-implanted gallium nitride (GaN) was performed as a function of ion implantation dose, anneal temperature, and implantation temperature. Additionally, acceptor-implanted GaN was also investigated. Temperature-dependent Hall effect measurements from 10-800 K and photoluminescence (PL) spectra taken from 3-300 K were used to characterize the samples. GaN wafers capped with 500 ? A1N were implanted at room temperature and at 800 oC with 200 keV Si ions at doses ranging from 1x1013 to 5x1015 cm-2 and annealed from 1050 to 1350 oC for 5 min to 17 sec in a flowing nitrogen environment.