Fabrication of rGO/Si Back-to-Back Schottky Diode Using PDMS Stamping

Abd Rahman, Shaharin Fadzli/ Wan Yusof, Wan Fahim Asqalani

ISBN 10: 6134980749 / ISBN 13: 9786134980746

Published by LAP LAMBERT Academic Publishing, 2018

About this Item

64 pages. 8.66x5.91x0.15 inches. In Stock.

Seller Inventory # zk6134980749

Bibliographic Details

• Title: Fabrication of rGO/Si Back-to-Back Schottky Diode Using PDMS Stamping
• Publisher: LAP LAMBERT Academic Publishing
• Publication Date: 2018
• Language: English
• ISBN 10: 6134980749
• ISBN 13: 9786134980746
• Binding: Paperback
• Condition: Brand New
• Weight: 0.14 kilograms

About this title

Synopsis

Graphene have many interesting electrical, mechanical and optical properties that open up a path for new applications. Further studies required for Graphene to be able to apply in many applications. Graphene/semiconductor heterojunctions are promising devices in future for real-life applications and an interesting platform for research especially in sensing application. The material can also be used as other types of chemical sensor such as humidity, oxygen, nitrogen and others. Hopefully, the back-to-back structure can be utilize as a useful sensor in the future to help improving the productivity of human life. In addition to that, a thin layer of graphene hopefully can be used in future small electronic application such as Integrated Circuit (IC) chips and electronic appliances.

About the Author

Passionate about technology that never failed to impress and fortunate enough to be able to keep up and observe the impact that it offers for the world. Interested in microelectronics, circuits design, IOT, entrepreneurship, arts, computer hardware, gadgets, travel, agriculture, nature and space.