Ferroelectric RAM | Ferroelectricity, Magnetoresistive Random Access Memory, NvSRAM, Phase-change memory, Programmable metallization cell, Racetrack memory, Flash memory, Lead zirconate titanate

Frederic P. Miller (u. a.)

ISBN 10: 6130211341 / ISBN 13: 9786130211349

Published by OmniScriptum, 2026

About this Item

Ferroelectric RAM | Ferroelectricity, Magnetoresistive Random Access Memory, NvSRAM, Phase-change memory, Programmable metallization cell, Racetrack memory, Flash memory, Lead zirconate titanate | Frederic P. Miller (u. a.) | Taschenbuch | Englisch | 2026 | OmniScriptum | EAN 9786130211349 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu Print on Demand.

Seller Inventory # 134831498

Bibliographic Details

• Title: Ferroelectric RAM | Ferroelectricity, Magnetoresistive Random Access Memory, NvSRAM, Phase-change memory, Programmable metallization cell, Racetrack memory, Flash memory, Lead zirconate titanate
• Publisher: OmniScriptum
• Publication Date: 2026
• Language: English
• ISBN 10: 6130211341
• ISBN 13: 9786130211349
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 4D millimeters 220 millimeters width by 150 millimeters height by 4 millimeters depth
• Weight: 113 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. Ferroelectric RAM is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory. FeRAM advantages over Flash include: lower power usage, faster write performance and a much greater maximum number of write-erase cycles. FeRAM disadvantages are much lower storage densities than Flash devices, storage capacity limitations and higher cost. Development of FeRAM began in the late 1980s. Work was done in 1991 at NASA's Jet Propulsion Laboratory on improving methods of read out, including a novel method of non-destructive readout using pulses of UV radiation. Much of the current FeRAM technology was developed by Ramtron, a fabless semiconductor company. One major licensee is Fujitsu, who operate what is probably the largest semiconductor foundry production line with FeRAM capability. Since 1999 they have been using this line to produce standalone FeRAMs, as well as specialized chips with embedded FeRAMs within. Fujitsu produces devices for Ramtron