Ferroelectric RAM

Language: English

Published by Alphascript Publishing Nov 2009, 2009

6130211341 / 9786130211349

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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.

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This item is printed on demand - it takes 3-4 days longer - Neuware -Ferroelectric RAM is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory. FeRAM advantages over Flash include: lower power usage, faster write performance and a much greater maximum number of write-erase cycles. FeRAM disadvantages are much lower storage densities than Flash devices, storage capacity limitations and higher cost. Development of FeRAM began in the late 1980s. Work was done in 1991 at NASA's Jet Propulsion Laboratory on improving methods of read out, including a novel method of non-destructive readout using pulses of UV radiation. Much of the current FeRAM technology was developed by Ramtron, a fabless semiconductor company. One major licensee is Fujitsu, who operate what is probably the largest semiconductor foundry production line with FeRAM capability. Since 1999 they have been using this line to produce standalone FeRAMs, as well as specialized chips with embedded FeRAMs within. Fujitsu produces devices for Ramtron Englisch.

Seller Inventory # 9786130211349

Title
Ferroelectric RAM
Author
Frederic P Miller
Publisher
Alphascript Publishing Nov 2009
Publication year
2009
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
6130211341
ISBN 13
9786130211349
Item weight
112 grams
Dimensions
22.00x15.00x0.30 cm

BuchWeltWeit Ludwig Meier e.K.

Bergisch Gladbach, Germany

5-star seller

AbeBooks seller since January 11, 2012

Shipping rates from Germany to U.S.A.

Item5 to 15 business days5 to 15 business days
First itemUS$ 26.56US$ 26.56
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BuchWeltWeit Ludwig Meier e.K.

Germany