Ferroelectric Random Access Memories: Fundamentals and Applications (Topics in Applied Physics)
Language: English
Published by Springer, 2004
- Hardcover
- Used

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- Title
- Ferroelectric Random Access Memories: Fundamentals and Applications (Topics in Applied Physics)
- Author
- Ishiwara, Hiroshi
- Publisher
- Springer
- Publication year
- 2004
- Condition
- Like New
- Book Type
- book
- Binding
- Hardcover
- Language
- English
- ISBN 10
- 3540407189
- ISBN 13
- 9783540407188
- Series
- Book 8 of 37: Topics in Applied Physics
In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.
"Synopsis" may belong to another edition of this title.
From the Back Cover
In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.
"About the title" may belong to another edition of this title.
Mispah books
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